Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Dae-kil Cha

Yoon-Dong Park

Young-Gu Jin

Tae-Hee Lee

Won-Joo Kim

Seung-hoon Lee

Sang-Moo Choi

Bok-ki Min

In-sung Joe

Moon-seung Yang

Jung-hoon Shin

Jee-soo Chang

Provided is a method of operating a semiconductor device, wherein an operating mode is set by adjusting timing of a voltage pulse or by adjusting a voltage level of the voltage pulse.

Method of operating semiconductor device

Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor

Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed on the semiconductor substrate and on opposing sides of the body region, and first and second impurity doped regions disposed on an upper surface of the body region. The gate patterns may be separated from the first and second impurity doped regions by, or greater than, a desired distance, such that the gate patterns do not to overlap the first and second impurity doped regions in a direction perpendicular to the first and second impurity doped regions.

Semiconductor devices and semiconductor apparatuses including the same

An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

Image sensor having nanodot

An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked.

Optical amplifying medium, method of manufacturing the optical amplifying medium, and optical device comprising the optical amplifying medium

Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.

Growing community of inventors

Seoul, South Korea

Dae-kil Cha