Samsung Electronics Co., Ltd.

Dae-Keun Kang

Jun Hyuk Seo

Tae-hyuk Ahn

Jong-chul Park

Jong-Heui Song

Hyuk-Jin Kwon

Yong-Sun Ko

In-seak Hwang

Byoung-Moon Yoon

Dae-Hyuk Chung

Se-Ho Cha

Keum-Joo Lee

Jin-Hye Bae

The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NHOH), hydrogen peroxide (HO) and deionized (DI) water, and a second cleaning solution including ozone (O) water. The present invention also provides methods of manufacturing a semiconductor device using these methods of cleaning the semiconductor device.

Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same

A method according to some embodiments of the invention includes defining an active region by forming a trench device isolation region on an integrated substrate, forming a mask pattern that exposes a channel sub-region of the active region and the trench device isolation region adjacent to the channel sub-region, etching the trench device isolation region, which is exposed by the mask pattern, to be recessed to a first depth using the mask pattern as an etch mask, etching the channel sub-region to form a gate trench having a second depth that is deeper than the first depth using the mask pattern as an etch mask, and forming a recess gate that fills the gate trench.

Method of manufacturing integrated circuit device including recessed channel transistor

Example embodiments of the present invention relate to methods of treating and removing a photoresist pattern and a method of manufacturing a semiconductor device using the same. Other example embodiments of the present invention relate to a method of treating a photoresist pattern and a method of removing a photoresist pattern formed using a photoresist composition suitable for argon fluoride (ArF). In a method of removing a photoresist pattern, an ozone vapor including a water vapor and an ozone gas may be provided onto the photoresist pattern to remove a hydrophobic group from a photoresist resin included in the photoresist pattern. A cleaning solution may be provided to make the photoresist pattern water-soluble. A cleaning process may be performed on the photoresist pattern to remove the photoresist pattern. The photoresist pattern may be effectively removed without an increased processing time and/or damage to a substrate.

Method of treating and removing a photoresist pattern and method of manufacturing a semiconductor device using the same

After a silicidation blocking pattern is formed on a substrate including silicon, the silicidation blocking pattern is hardened by a thermal annealing process. The substrate is rinsed to remove a native oxide film formed on the substrate, and then a silicide film is formed on a portion of the substrate exposed by the silicidation blocking pattern. The silicide film can thus be formed in an exact portion of the substrate, and the substrate is not damaged during rinsing.

Method for forming a silicide film of a semiconductor device

Growing community of inventors

Incheon, South Korea

Dae-Keun Kang