Samsung Electronics Co., Ltd.

Dae Joung Kim

Dae Kyung Ahn

Seung Chan Lee

Sang Sung Woo

Sangmin Hyun

Sang Min Hyun

Jae Mun Kim

Jae Jong Han

Gun Ho Jo

Moon Han Park

Tae Ho Cha

Jae Jun Kim

Gi Sung Han

Disclosed are a rack assembly capable of enhancing usability by improving a rack assembly structure, and a dishwasher having the rack assembly. The dishwasher includes: a washing tub; and a rack assembly provided inside the washing tub, wherein the rack assembly includes: a frame; a tray on which dishes are accommodated and which is movably supported on the frame; and a link unit connecting the frame to the tray and moving the tray to one of a first location and a second location that is lower than the first location, the link unit being rotatably coupled with the frame and the tray.

Rack assembly and dishwasher having same

A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

FinFET devices having active patterns and gate spacers on field insulating layers

Methods for fabricating finFET devices having gate spacers on field insulating layers

Speaker

Growing community of inventors

Seoul, South Korea

Dae Joung Kim