Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

Samsung Electronics Co., Ltd.

Poongsan Corporation

Ulsan Chemical Co., Ltd.

Poonsgan Corporation

Dae Hyun Kim

Hun Joo Hahm

Hyung Suk Kim

Dae Yeon Kim

Do Hun Kim

Young Sam Park

Seong Yeon Han

Sang Young Choi

Dong Woo Lee

In Dal Kim

Bo Min Jeon

Ji Hoon Lee

Yuichi Iikubo

Young Su Kim

Cheol Ho Kim

Hyang Ja Jang

Jung Eun Lee

Young Gu Cho

The present invention relates to a method of manufacturing a high purity copper (Cu) powder material useable in fabricating a sputtering target material for electronic industrial applications, for example a penetrator liner. The foregoing method has a configuration of using an apparatus composed of a raw material feeder, a plasma torch and a reactor to prepare a metal powder, and includes steps of passing a Cu powder having an average particle diameter of 30 to 450 &#x3bc;m through the thermal plasma torch at an introduction rate of 2 to 30 kg/hr, to thereby fabricate a Cu powder having an average particle diameter of 5 to 300 &#x3bc;m.

Production method for high purity copper powder using a thermal plasma

A copper alloy includes Si to facilitate deoxidation, and can be easily manufactured even when including elements such as Cr or Sn. The copper alloy has high conductivity and high workability without negatively affecting the tensile strength. The copper alloy contains 0.2 to 0.4 wt % of Cr, 0.05 to 0.15 wt % of Sn, 0.05 to 0.15 wt % of Zn, 0.01 to 0.30 wt % of Mg, 0.03 to 0.07 wt % of Si, with the remainder being Cu and inevitable impurities. A method for manufacturing the copper alloy includes obtaining a molten metal having the described composition; obtaining an ingot; heating the ingot at a temperature of 900-1000&#xb0; C. to perform a hot rolling process; cold rolling; performing a first aging process at a temperature of 400-500&#xb0; C. for 2 to 8 hours; cold rolling; and performing a second aging process at a temperature of 370-450&#xb0; C. for 2 to 8 hours.

Copper alloy with high strength and high conductibility, and method for manufacturing same

There is provided a light emitting module including: a printed circuit board; a plurality of light emitting diode chips disposed at a distance from one another on a conductive pattern formed on a top of the printed circuit board; and a connector formed on a bottom of the printed circuit board and electrically connected to the plurality of light emitting diode chips. The light emitting diode chips and the connector are optimally arranged to ensure that the light emitting module is suitably utilized as a high-density linear light source including a great number of light emitting diode chips and emits light outward with minimum loss.

Light emitting module

The present invention provides a light emitting diode package which includes a lead frame with a cavity; a mold exposing the cavity and housing the lead frame; and an LED chip mounted on the cavity, wherein light passing an upper edge of the LED chip passes an upper edge of the cavity.

Light emitting diode package including a lead frame with a cavity

A backlight unit for a liquid crystal display (LCD) device, disposed under a liquid crystal panel to illuminate the liquid crystal panel. The backlight unit includes a light guide plate, first and second light emitting diode (LED) arrays, disposed on adjacent sides, perpendicular to each other, of the light guide plate, each array having a plurality of LED blocks, consisting of one or more LEDs, and a control unit that controls electric signals, respectively inputted to the LED blocks, to regulate luminance for the respective LED blocks, wherein light emitted from the first and second LED arrays is overlapped each other in the light guide plate.

Backlight unit implementing local dimming for liquid crystal display device

Case for light emitting diode

Light-emitting diode

The method of preparing a chromium oxide catalyst for preparation of pentafluoroethane using a chloroethane compound includes heat treating chromium hydroxide powder at a temperature not higher than 300&#xb0; C. to obtain chromium oxide powder, heat treating metal hydroxide, at a temperature not higher than 300&#xb0; C. to obtain metal oxide powder, mixing 85&#x2dc;99.5 wt % of the chromium oxide powder with 0.5&#x2dc;15 wt % of the metal oxide powder to obtain a mixture, forming the mixture into a pellet, calcining the pellet at 200-300&#xb0; C. using nitrogen gas, and fluorinating the pellet at 300-320&#xb0; C. using a gas mixture including Nand HF, and then at 320-380&#xb0; C. using HF gas. The fluorination catalyst prepared using the method of this invention can be effectively used to prepare pentafluoroethane at a high yield using a chloroethane compound.

Catalyst for preparation of pentafluoroethane and preparation method thereof

Growing community of inventors

Ulsan, South Korea

Dae Hyun Kim