Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Ulsan National Institute of Science and Technology

Lg Display Co., Ltd.

Dongbu Daewoo Electronics Corporation

Kyungdong Navien Co., Ltd.

Other

Hyundai Mobis Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Sk Innovation Co., Ltd.

Postech Academy-Industry Foundation

Samsung Displayco., Ltd.

S-Printing Solution Co., Ltd.

Doosan Corporation

Doosan Heavy Industries & Construction Co., Ltd

Dae Hyun Kim

Hyun Min Cho

Hyun Deok Im

Jong Hyuk Kang

Joo Yeol Lee

Keun Kyu Song

Dong Uk Kim

Bek Hyun Lim

Xinxing Li

Hee Keun Lee

Chang Il Tae

Tae Jin Kong

Hye Yong Chu

Jin Oh Kwag

Jae Byung Park

Sung Chul Kim

Je Won Yoo

Sung Chan Jo

Won Sik Oh

Myeong Hee Kim

Jin Sung Kim

Dongchan Kim

Seung Hwan Kim

Jun Jin Kong

Sung Hwan Kim

Sung Jin Hong

Sang Moo Choi

Jun Kyu Park

Chul Kyu Kang

Dong Sun Lee

Gun-Ho Kim

Chun-Ho Song

Soo Hee Oh

Dong-Hoon Lee

Do Hun Kim

Hun Joo Hahm

Tae Jin Kim

Seon-Tae Yoon

Young Sam Park

Hyung Suk Kim

Yo Han Lee

Jae Hoon Jung

Haeil Park

Jae Ik Lim

Dong Ju Moon

Mun-Ki Sim

Seong Yeon Han

Jeong Woo Kim

Jung Hong Min

Hyung Rae Cha

Seung A Lee

Veidhes Basrur

Chi O Cho

Eun Ho Kim

Gun Ho Kim

Jisoo Lee

Ho Young Joo

Junghwan Huh

Sung-Chan Jo

Sungsik Yun

Sin Chul Kang

Dong Eon Lee

Ock Soo Son

Yu-Kwan Kim

Donchan Cho

Hyung-Dal Kwon

Seung Geun Lee

Ki Jun Lee

Kang Young Lee

Jae Bum Cho

Jang Bog Ju

Jae Woong Kang

Basrur Veidhes

Jong Won Lee

Myung Kyu Lee

Se Young Kim

Sang Hyun Kang

Dae Yeon Kim

Dongsun Lee

Byung Gwon Lee

Minki Nam

Jae Hun Lee

Sung Il Park

Su Mi Moon

Sung-jin Hong

Sangmoo Choi

Seung Jun Bae

Sang Moo Song

An Na Ryu

Tae Young Oh

Bo Gun Park

Tae Joo Park

Gil Won Han

Dong Kyun Seo

Byong-Sung Kwak

Jung Shik Kang

Joong Sun Yoon

Ki Sun Jang

Jong Woo Ryu

Wonil Bae

A semiconductor device includes a substrate, a gate trench in the substrate, a gate insulating film in the gate trench, a titanium nitride (TiN)-lower gate electrode film on the gate insulating film, the titanium nitride (TiN)-lower gate electrode film including a top surface, a first side surface, and a second side surface opposite the first side surface, a polysilicon-upper gate electrode film on the titanium nitride (TiN)-lower gate electrode film, and a gate capping film on the polysilicon-upper gate electrode film. A center portion of the top surface of the titanium nitride (TiN)-lower gate electrode film overlaps a center portion of the polysilicon-upper gate electrode film in a direction that is perpendicular to a top surface of the substrate, and each of the first side surface and the second side surface of the titanium nitride (TiN)-lower gate electrode film is connected to the gate insulating film.

Semiconductor device having contact structure including lower contact pattern and upper contact pattern between line structures

An optical inspection apparatus includes a stage that supports a target substrate, the target substrate including a plurality of light emitting elements, a jig that applies an electrical signal to the target substrate, the jig including a regulation resistor, a microscope that generates magnified image data of the target substrate, a camera that captures the magnified image data to generate a color image of the target substrate, and an optical measurement unit that captures the magnified image data of the target substrate to generate a spectrum image and measure optical characteristics of the target substrate.

Optical inspection apparatus

A light emitting element includes: a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; a third semiconductor layer comprising a third-first semiconductor layer and a third-second semiconductor layer stacked on the second semiconductor layer; and a fourth semiconductor layer disposed on the third-second semiconductor layer. The third semiconductor layer is a tunneling junction layer. A sum of a thickness of the fourth semiconductor layer and the third-second semiconductor layer is different from a sum of a thickness of the second semiconductor layer and the third-first semiconductor layer.

Light-emitting element and display device including the same

A light emitting element includes a first semiconductor layer; an active layer on a surface of the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film to enclose an outer periphery of each of the first semiconductor layer, the active layer, and the second semiconductor layer; and an electrode layer on the second semiconductor layer. The first semiconductor layer includes a first area that is covered by the insulating film, and a second area that is not covered by the insulating film. A perimeter of the outer periphery of the first semiconductor layer in the first area and a perimeter of the outer periphery of the first semiconductor layer in the second area are different from each other.

Light-emitting diode, and display device including light-emitting diode

A display device including: a first substrate on which a plurality of sub-pixels are located; a plurality of color filter layers on the first substrate; a bank layer including a first bank at a boundary between the plurality of sub-pixels and located on the color filter layers; a color control structure including a plurality of light transmitting layers and wavelength conversion layers in a region surrounded by the first bank on the color filter layer; a light emitting element layer between the color filter layer and the color control structure; a reflective layer on the color control structure; and a first electrode and a second electrode on the color filter layer and at least partially located at the same plane, wherein the light emitting element layer includes a plurality of light emitting elements, each of the light emitting elements having respective ends on the first and second electrodes.

Display device

A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.

A light emitting device may include: a substrate including a plurality of unit light emitting regions; and first to fourth insulating layers sequentially on the substrate. Each of the unit light emitting regions may include: at least one light emitting element on the first insulating layer, the at least one light emitting element having a first end portion and a second end portion in a length direction thereof; first and second partition walls on the substrate, and the first and second partition walls being spaced apart from each other; a first reflective electrode on the first partition wall and a second reflective electrode on the second partition wall; a first contact electrode on the first reflective electrode, the first contact electrode connecting the first reflective electrode and the first end portion of the light emitting element; a second contact electrode on the second reflective electrode, the second contact electrode connecting the second reflective electrode and the second end portion of the light emitting element; and a conductive pattern provided between the first insulating layer and the first contact electrode, the conductive pattern surrounding the first and second reflective electrodes when viewed on a plane.

Light-emitting device, display device having same, and method for manufacturing same

A display device includes a first electrode stem and a second electrode stem extended in a first direction and spaced from each other, a first electrode branch branching off from the first electrode stem and extended in a second direction, a second electrode branch branching off from the second electrode stem and extended in the second direction, a third electrode between the first electrode branch and the second electrode branch and one or more light-emitting elements between the first electrode branch and the third electrode and between the third electrode and the second electrode branch, wherein the third electrode is extended in the second direction, and both ends of the third electrode in the second direction are spaced from the first electrode stem and from the second electrode stem, respectively.

Display device with light emitting elements on parallel electrode branches extending from separate parallel electrodes

A light emitting element may include an emission stacked pattern including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that are stacked in a longitudinal direction of the emission stacked pattern. The active layer may include a first surface that is in contact with the first conductive semiconductor layer in the longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer. The first conductive semiconductor layer may include at least one n-type semiconductor layer, and the second conductive semiconductor layer may include at least one p-type semiconductor layer. Further, the first surface of the active layer may be located at a point corresponding to −20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern.

Light-emitting element and display device including same

Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.

Manufacturing method for forming an inorganic light emitting element having a low surface roughness

A display device includes a first electrode and a second electrode disposed on a substrate and spaced apart from each other, a light emitting element on the substrate and having a first end and a second end, a third electrode disposed on the light emitting element, and electrically connecting the first electrode with the first end of the light emitting element, an insulating pattern disposed on the third electrode and exposing the second end of the light emitting element, and a fourth electrode on the substrate, and electrically connecting the second electrode with the second end of the light emitting element. A void may be formed between the light emitting element and the insulating pattern.

Display device and method for manufacturing same

A display device includes a first substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area; a first sub-pixel including a first light emitting element disposed in the first sub-pixel area; a second sub-pixel including a second light emitting element disposed in the second sub-pixel area; a third sub-pixel including a third light emitting element disposed in the third sub-pixel area; and a bank disposed between the first sub-pixel, the second sub-pixel, and the third sub-pixel and enclosing an emission area of each of the first sub-pixel, the second sub-pixel, and the third sub-pixel. The bank includes a color bank including a color filter material that blocks light of colors emitted from the first light emitting element, the second light emitting element, and the third light emitting element.

Light-emitting device and display device including bank structures comprised of color filter material

A method for providing exercise contents based on motion recognition for a movement of a bust area of a user, includes: an exercise content providing step of outputting, through a user interface executed in a user terminal, exercise contents including multimedia contents; an exercise data extracting step of extracting, from recognized motion data, exercise data including identification information about a body area of the user subject to exercise and numerical information indicating a quantitative value of the exercise by recognizing a user's motion using image data about the target area captured by a capturing unit of the user terminal; and a result data calculating step of calculating result data, which is quantitative data about body improvement of the user by using the exercise data extracted in the exercise data extracting step and user status data including health status information and body specification information of the user.

Method, apparatus, and computer-readable recording medium for providing exercise contents based on motion recognition for movement of bust area

A light emitting device may include a first electrode disposed on a substrate, and a second electrode spaced apart from the first electrode, the first electrode and the second electrode being disposed on a same layer; an insulating pattern disposed between the first electrode and the second electrode, and overlapping a portion of the first electrode and a portion of the second electrode; and at least one light emitting element disposed on the insulating pattern, and including a first end and a second end in a longitudinal direction of the at least one light emitting element; a first bank disposed on the first electrode, and a second bank disposed on the second electrode; a first reflective electrode disposed on the first bank and electrically connected with the first electrode; and a second reflective electrode disposed on the second bank and electrically connected with the second electrode.

Light-emitting device, method for manufacturing same, and display device comprising same

A light emitting element having a shape extending in a direction includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and second semiconductor layers, a first electrode layer on a second surface opposite to a first surface of the first semiconductor layer facing the active layer, a second electrode layer on a second surface opposite to a first surface of the second semiconductor layer facing the active layer, and an insulating film surrounding a side surface of the active layer, a side surface of the first electrode layer, and a side surface of the second electrode layer, wherein a first area including the insulating film adjacent to a side surface of the active layer has a thickness larger than a thickness of a second area including the insulating film adjacent to a side surface of the first electrode layer.

Light emitting element, manufacturing method thereof, and display device comprising the light emitting element

Growing community of inventors

Yongin-si, South Korea

Dae Hyun Kim