Samsung Electronics Co., Ltd.

Dae-hyuk Chung

Jong-Ho Park

Woo-Sik Kim

Chang-Won Choi

Shin-woo Nam

Bum-su Kim

Ji-hwan Choi

Yeo-cheol Yoon

In-seak Hwang

Yong-sun Ko

Heon-jae Ha

A semiconductor device having a chamfered silicide layer and a manufacturing method of the same. The semiconductor device includes: a first insulation layer overlying a semiconductor substrate; gate structures including first conductive layer patterns formed on the first insulation layer, and second conductive layer patterns which are formed on the first conductive layer patterns, wherein the lower sides of the second conductive layer patterns are substantially perpendicular to the major surface of the semiconductor substrate and the upper sides of the second conductive layer patterns are chamfered; and a second insulation layer formed with a first width W on the second conductive layer patterns, wherein the sidewalls of the second insulation layer overhang the upper edges of the second conductive layer patterns. In the semiconductor device manufacture, in forming undercut regions which define the chamfered upper edges of the metal silicide layer patterns, isotropic dry etching is carried out, wherein the isotropic dry etching can be performed simultaneously with ashing of photoresist patterns, or immediately after the ashing process in the same chamber. In either case, after the ashing of the photoresist patterns, an isotropic wet etching can be carried out immediately after performing an existing stripping process, so as to form the undercut regions.

Methods of manufacturing semiconductor devices having chamfered silicide layers therein

Semiconductor device having chamfered silicide layer and method for manufacturing the same

Cleaning solutions for removing contaminants from semiconductor substrates are provided and include from about 0.08 to about 0.1 percent by weight of hydrogen fluoride; from about 0.5 to about 0.6 percent by weight of ammonium fluoride; from about 24.9 to about 49.7 percent by weight of hydrogen peroxide; and from about 49.6 to about 74.5 percent by weight of water.

Cleaning solutions for removing contaminants from the surfaces of semiconductor substrates and cleaning methods using the same

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Kyungki-do, South Korea

Dae-hyuk Chung