K. C. Tech Co., Ltd.

Iucf-Hyu

Kings Information and Network

University of Illinois

Northwestern University

Dae Hyeong Kim

John A Rogers

Jea Gun Park

Heung Cho Ko

Mark Stoykovich

Yonggang Huang

Yong Kim

Sang Kyun Kim

Jong Hyun Ahn

Un Gyu Paik

Seok Min Hong

Jae Hyun Jeon

Hyun Ku Park

Seong Ho Cheong

Jae Gun Park

Ye Hwan Kim

Myoung Won Suh

Ho Seong Kim

Un Gyu Park

Won Mook Choi

Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 &#x3bc;m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Polishing slurry, method of producing same, and method of polishing substrate

A keyboard security status check module and method are provided. The module is provided to enable a user to easily check the operating status of a keyboard security program installed in a user terminal. The module includes a keyboard security monitor linked to the keyboard security program and configured to monitor a reception status of key input data protected by keyboard security, and a controller configured to display a dynamic keyboard security check representation on a screen of the user terminal according to the reception status of the key input data monitored by the keyboard security monitor.

Keyboard security status check module and method

A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.

CMP slurry, preparation method thereof and method of polishing substrate using the same

Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 &#x3bc;m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 &#x3bc;m or less, particularly, the STI process.

Slurry for CMP and method of polishing substrate using same

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Seoul, South Korea

Dae Hyeong Kim