Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Samsung Display Co., Ltd.

Korea Advanced Institute of Science and Technology

Coway Co., Ltd

Chung Ang University Industry Academic Cooperation

Hewlett-packard Development Company, L.p.

Hp Printing Korea Co., Ltd.

Dae-Hwan Kim

Tatsuhiro Otsuka

Keon Kuk

Jin-han Kim

Jung-Hwa Lee

Jun-o Kim

Jin-Won Lee

Hyun-Sik Seo

Jong-Uk Bae

Young-min Cheong

Seung-jin Oh

Tae Young Kim

Je-Hun Lee

Sung-Chul Kim

Jae-Hong Park

Kun-ho Cho

Dae-Sik Kim

Kwang Hyun Kim

Young-Il Kim

Ho-Cheol Lee

Sung-jung Cho

Jong Woo Park

Soon-kyo Hong

Jin-Han Kim

Yong-Woo Jeon

Sei-yong Park

Sul Lee

Jun-Hyun Park

Sang-Hyeon Kang

Byong-mo Moon

Byung-ryul Ryoo

Young-Jae Lee

Young-dae Ko

Jeong-hoon Kook

Jung-suk Kim

Hoon Yim

Joo-ho Kim

Woo-Kyu Kim

Sun-Rock Choi

Byung-Du Ahn

Dong-Won Shin

Min Ho Heo

Byung-Kook Choi

Jae-Woo Park

Keon-Young Cho

Doo-Won Han

Si-Jun Park

Jin-Seong Ka

Hyun-Seok Moon

Jin-Hyung Kim

Tae-Sung Lee

Hyuck-In Kwon

Byung-Sun Mo

Go-Un Lee

Jae-Man Kim

Ryan Kim

Hwi-Woong Kim

Yun-Jeong Kang

Kyoung-Ryoul Kim

Hee-Joong Kim

Sae-Young Hong

Kwang-sup Im

Byeong-Hyeon Lee

Jin-Hwan Noh

Disclosed is an electronic device and method for reducing burn-in on a display. The electronic device may include a display and a processor. The processor implements the method, including controlling the display to display a background screen and one or more windows on the background screen, confirming a location of a first window when the first window is selected by a user from among the one or more windows, generating a blurred window border to be applied to the first window based on the selection of the first window, and controlling the display to display the blurred window border along a boundary of the first window.

Electronic device for reducing burn-in and computer-readable recording medium

A vertical stack transistor includes: a first transistor and a second transistor, located in a vertical direction, wherein the first transistor includes a first gate electrode, a first insulating layer, a first electrode, a first channel, and a second electrode, which are sequentially stacked in the vertical direction, and the second transistor includes a second gate electrode, a second insulating layer, a third electrode, a second channel, and a fourth electrode, which are sequentially stacked in the vertical direction, wherein the second gate electrode and the second electrode are the same electrode.

Vertical stack transistor, a display device including the vertical stack transistor, and a manufacturing method of the display device

Disclosed is a filter cartridge. The filter cartridge includes an inner filter in the form of an approximately cylindrical corrugated membrane, an outer filter in the form of an approximately cylindrical corrugated membrane, the outer filter having a diameter greater than that of the inner filter and being installed around the inner filter, and at least one holder to support the inner filter and the outer filter.

Filter cartridge

An induction heating fusing device and method of an image forming apparatus including: a pressure roller; a heating element that forms a fusing nip together with the pressure roller and is rotatable; an inductor that is installed in a rotation axis direction on the outer circumference surface of the heating element, includes a main coil and a plurality of control coils located on the main coil, and inductively heats the heating element; and a controller that selectively drives at least one of the plurality of control coils depending on the width of a printing paper passing though the fusing nip, and controls the main coil and the plurality of control coils so that a current direction of the main coil and a current direction of the plurality of control coils become the same as or opposite to each other depending on the width of the printing paper.

Fusing device and method using induction heating and image forming apparaus including the fusing device

A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gusing a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gand values of an interface state-density-function Dover the entire energy band in the band gap.

Method for calculating parameter values of thin-film transistor and apparatus for performing the method

The apparatus includes a heating roller that generates heat for melting toner attached to a printing medium; a first induction coil that is disposed outside the heating roller and heats the heating roller by using induced current generated according to current flowing through the first induction coil; two second induction coils that are disposed at upper portions of both ends of the first induction coil and heat the heating roller by using induced current generated according to current flowing through the two second induction coils; a power supply unit that supplies current to the first induction coil and the two second induction coils; and a control unit that controls the power supply unit to supply current flowing in the same direction or different directions to the first induction coil and the second induction coils according to the size of paper fed into the heating roller.

Apparatus and method to control temperature of heating roller used in fusing device of image forming apparatus

An oxide thin film transistor (TFT) and a fabrication method thereof are provided. The method for fabricating an oxide thin film transistor (TFT) comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate with the gate electrode formed thereon; forming an active layer made of oxide semiconductor on the gate insulating layer; forming a contact layer on the substrate with the active layer formed thereon and forming source and drain electrodes, which are electrically connected with source and drain regions of the active layer through the contact layer, on the contact layer; forming a protective layer on the substrate with the source and drain electrodes formed thereon; forming a contact hole by removing the protective layer to expose the drain electrode; and forming a pixel electrode electrically connected with the drain electrode through the contact hole, wherein the contact layer is made of oxide including a different metal or conductivity with that of the source and drain electrodes, to adjust a threshold voltage according to the difference in a work function.

Oxide thin film transistor and method of fabricating the same

An induction heating type fusing device and an image forming apparatus including the fusing device. The fusing device includes a magnetic flux generator and a compressing roller outside a fusing belt, first and second fusing rollers and a nip guide inside the fusing belt. The compressing roller compresses against the first and second fusing rollers and the nip guide to form nips, while the fusing belt is disposed between the compressing roller and the first and second fusing rollers and the nip guide.

Induction heating type fusing device and image forming apparatus employing the same

An apparatus and method of generating personal fonts is provided, which can modify a trace of handwriting inputted by a user into an elegant one and generate diverse personal fonts in accordance with user's style of handwriting. The apparatus for generating personal fonts includes a character input unit to receive an input of a character trace from a user, a character recognition unit to recognize a representative character corresponding to an input character from the input character trace, a representative trace generation unit to generate a representative trace expressing a trace of the representative character, and a trace modification unit to modify the trace of the input character by combining a weight value of the generated representative trace with the trace of the input character.

Apparatus and method of generating personal fonts

A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C=Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z&#x2267;0).

Disclosed are an apparatus and a method for detecting a surface plasmon resonance. The apparatus may radiate a polarized beam of light to a device, such as a surface plasmon resonance generator, and may measure variations in a temperature of the device to detect whether a surface plasmon resonance has occurred. The detection of a surface plasmon resonance may be associated with the presence of a particular material such as volatile organic compounds (VOCs) or materials disrupting ozone, for example.

Apparatus and method for detecting surface plasmon resonance

An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes.

Growing community of inventors

Seoul, South Korea

Dae-Hwan Kim