Samsung Electronics Co., Ltd.

Industry-Academic Cooperation Foundation

Dae-Hong Ko

Nae-in Lee

Young-wook Park

Bong-young Yoo

Young-sun Kim

In-Seok Yeo

Sang-Yeon Kim

Myung-jong Kim

Mann-Ho Cho

Hyun-Chul Sohn

Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.

Methods of fabricating semiconductor devices and semiconductor devices fabricated by the same

A semiconductor device adopting an interlayer contact structure between upper and lower conductive layers and a method of manufacturing the semiconductor device adopting the structure are provided. The lower conductive layer includes a first conductive layer and a first silicide layer stacked together. The upper conductive layer includes a second conductive layer doped with impurities and a second silicide layer stacked together. In the interlayer contact structure, the first and second conductive layers are in direct contact with each other. This decreases the contact resistance between the two conductive layers and improves the electrical properties of the device.

Method of forming a contact structure having an anchoring portion

Apparatus and manufacturing method for semiconductor device adopting NA interlayer contact structure

A gate electrode in a semiconductor device comprising; a gate oxide layer formed on a semiconductor substrate, a polysilicon layer formed on the gate oxide layer, a silicide layer formed on the polysilicon layer and, a metal silicide layer formed on the silicide layer.

Gate electrode for semiconductor device

Growing community of inventors

Seoul, South Korea

Dae-Hong Ko