Samsung Electronics Co., Ltd.

Sungkyunkwan University

Samsung Display Co., Ltd.

Dae-ho Yoon

Sung-soo Park

Moon-sang Lee

Won-Jong Kim

Yong-Tak Kim

Yong-hwa Park

Seok-Gyu Yoon

Jong-hyuk Lee

Bong-Kyun Kang

Hosono Hideo

Chul-ho Jung

A nitride semiconductor device may include a substrate, a dislocation control layer formed on the substrate and including a plurality of hollow structures including a nitride, and a nitride semiconductor layer formed on the dislocation control layer.

Method of manufacturing nitride semiconductor device

A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material.

Nitride semiconductor device and method of manufacturing the same

An electrode including metal oxides and a plurality of 12CaO.7AlOparticles, a method of preparing the electrode, an electronic device including the electrode, and, in particular, an organic light emitting device including the electrode. The electrode has low resistance, high optical transmittance, and a low work function.

Electrode, method of preparing the same, and electronic device including the electrode

An optical image shutter having a transparent electro-optical crystal formed on a transparent amorphous substrate and a method of manufacturing the optical image shutter. The light image shutter is created by forming a buffer layer using a material having a similar crystalline structure to an electro-optical crystal, on a transparent amorphous substrate such as glass, and forming an electro-optical thin film layer such as the electro-optical crystal on the buffer layer.

Optical image shutter and method of manufacturing the same

A method of manufacturing a nitride semiconductor substrate according to example embodiments may include forming a buffer layer on a (100) plane of a silicon (Si) substrate. The buffer layer may have a hexagonal crystal system and a (1010) plane. A nitride semiconductor layer may be epitaxially grown on the buffer layer. The nitride semiconductor layer may have a (1010) plane. Accordingly, because example embodiments enable the use of a relatively inexpensive Si substrate, a more economical nitride semiconductor substrate having a relatively large diameter may be achieved.

Growing community of inventors

Suwon-si, South Korea

Dae-ho Yoon