Skhynix Inc.

Hynix Semiconductor Inc.

Dae Ho Rho

Jeong Tae Kim

Hyun Kyu Kim

Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part.

Fabrication method of vertical type semiconductor memory apparatus

Vertical type semiconductor memory apparatus and fabrication method thereof

A phase change random access memory for actively removing residual heat and a method of manufacturing the same are presented. The phase change random access memory includes a semiconductor substrate, a phase change pattern, a heating electrode and a cooling electrode. The phase change pattern is on the semiconductor substrate. The heating electrode is electrically coupled to the phase change pattern for heating the phase change pattern. The cooling electrode is electrically coupled to the phase change pattern for removing residual heat from the phase change pattern.

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Gyeonggi-do, South Korea

Dae Ho Rho