Samsung Electronics Co., Ltd.

Dae-Han Yoo

Hyeon-Deok Lee

Chang-Hoon Lee

Kong-Soo Lee

Young-sub You

Jung-Hwan Oh

Yong-Woo Hyung

Hyo-jung Kim

A recessed gate electrode structure includes a first recess and a second recess in communication with the first recess both formed in a substrate. The second recess is larger than the first recess. A gate dielectric layer is formed on a top surface of the substrate and on an inner surface of the first and second recesses. A first polysilicon layer fills the first recess and is doped with impurities at a first impurity density. A second polysilicon layer fills the second recess and is doped with the impurities at a second impurity density. A void is defined within the second polysilicon layer. A third polysilicon layer is formed on the gate dielectric and first polysilicon layers and is doped with the impurities at a third impurity density. Due to impurities in the second polysilicon layer, migration of the void within the second recess may be substantially prevented.

Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same

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Seoul, South Korea

Dae-Han Yoo