Skhynix Inc.

Dae Gun Kang

Jae Geun Oh

Su-Jin Chae

Deok Lae Ahn

Hyun Seok Kang

Won Ki Joo

A memory device and an electronic device including the same are provided. The memory device includes a first memory cell disposed at an intersection of first and second conductive lines that extend in first and second directions, respectively, a second memory cell spaced apart from the first memory cell by a first distance in the first direction, a third memory cell spaced apart from the first memory cell by a second distance in the second direction, a first insulating pattern disposed between the first memory cell and the second memory cell, and a second insulating pattern disposed between the first memory cell and the third memory cell. The second insulating pattern has a lower thermal conductivity than the first insulating pattern.

Growing community of inventors

Icheon, South Korea

Dae Gun Kang