Samsung Display Co., Ltd.

Dae Cheol Kim

Woong Kwon Kim

Ki-Hun Jeong

Jung Suk Bang

Kun-Wook Han

Byeong Hoon Cho

Sung Ryul Kim

Sang Ho Kim

Sang Wook Lee

Young Goo Song

Kyung-Sook Jeon

Sang Youn Han

Suk Won Jung

Sung Hoon Yang

Jung-Suk Bang

Jae-Jin Song

Kook Hyun Choi

Jong Hwan Park

Seung Mi Seo

Seung Soo Baek

Nam-Heon Kim

Hea Chun Lee

Ki Hun Jeong

Hong-Kee Chin

Do Yeong Park

Yun Jong Yeo

In Woo Kim

Yong Tae Cho

Sang Myoung Lee

Sang Hyun Kang

Joon Huh

Chang Woo Kwon

Su Bin Park

Sung Jin Mun

A display device that includes multiple pixels, each pixel includes a light emitting element, a multiple of transistors, multiple voltage sources and capacitors. The pixel circuit is designed and the pixels are driven so that a driving current going through the light emitting element is independent of a threshold voltage of a driving transistor of the multiple transistors. As a result, luminance variation due to threshold voltage can be minimized, and residual image can be reduced.

Pixel and display device including the same

A display device includes a conductive pattern on a substrate, a via layer on the conductive pattern with a via hole exposing the conductive pattern, a first electrode and a second electrode on the via layer and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, a bank layer on the first insulating layer defining an emission area and a subarea, a light-emitting element on the first insulating layer, and a first connection electrode and a second connection electrode on the first insulating layer and the light-emitting element. The first connection electrode electrically contacts an end of the light-emitting element, and the second connection electrode electrically contacts another end of the light-emitting element. The bank layer includes a bank extension portion extended to the subarea and the bank extension portion overlaps at least a portion of the via hole.

Display device and method of manufacturing the same

A display device of the present disclosure comprises pixels arranged in a display, a data accumulator for accumulating first image data for an N-th frame output through the display, a data receiver for receiving second image data for an (N+1)th frame to be output through the display, and an afterimage controller for correcting a current value corresponding to a grayscale value of the second image data through a convolution operation between a filter, which is set based on the first image data, and the second image data.

Display device and method for driving the same

Touch-related information which cannot be acquired by the naked eye (dubbed here as sub-optical pattern information) has its corresponding sub-optical patterns respectively positioned within the aperture areas of respective domains such that the displayed image, as viewed from different viewing angles is not adversely affected by the embedded sub-optical patterns. One type of touch-related information which can be conveyed is that of touch location of a sub-optical pattern sensing pen positioned over one or more of the sub-optical patterns.

Display device

A panel for a display device is provided. The panel includes a first substrate, a touch sensing circuit formed on the first substrate, the touch sensing circuit including at least one sensing thin film transistor and a connection wire, and a shielding electrode formed covering at least a portion of the sensing thin film transistor and the connection wire.

Display having touch sensing function

An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

IR sensing transistor and manufacturing method of display device including the same

An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.

Optical sensor

Growing community of inventors

Hwaseong-si, South Korea

Dae Cheol Kim