Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Dae-Cheol Kim

Woong-Kwon Kim

Ki-Hun Jeong

Sang-Youn Han

Byeong-Hoon Cho

Jung-Suk Bang

Sung-Hoon Yang

Kyung-Sook Jeon

Sung-Ryul Kim

Hong-Kee Chin

Kun-Wook Han

Yun-Jong Yeo

Mi-Seon Seo

Suk-Won Jung

Ho-Jun Lee

Seung-Mi Seo

Kyung-Ho Park

Jun-Ho Song

Kap-Soo Yoon

Dong-Kwon Kim

Sung-Jin Mun

Sang-Woo Park

Joo-han Kim

Hyun-young Kim

Hee-Joon Kim

Suk Won Jung

Tadashi Amino

Seung Mi Seo

In-Woo Kim

Byeong-Jae Ahn

Noboru Takeuchi

Sung-In Ro

Kwi-Hyun Kim

Hui-Sung Lee

Yung-Jong Yeo

A display apparatus includes a display panel which includes a gate line, a data line and a storage line, and displays an image, a gate driving part configured to output a gate signal to the gate line, a data driving part configured to output a data signal based on an image data of the image to the data line, and a voltage providing part configured to apply an alternating current voltage to the storage line.

Display apparatus with decreased afterimage

Provided are a touch screen panel and a method of manufacturing the same. The touch screen panel comprises: a substrate; a first reflection-preventing film formed on the substrate; a first gate wiring formed on the first reflection-preventing film; and a sensing wiring formed above the first gate wiring to be insulated from the first gate wiring and to cross the first gate wiring.

Touch screen panel and method of manufacturing the same

A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern.

Electrostatic member in forming touch display apparatus and method of manufacturing the same

A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Visible sensing transistor, display panel and manufacturing method thereof

A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.

Touch screen substrate, method of manufacturing the same, and display panel including the touch screen substrate

A method of processing touch-image data includes calculating a plurality of motion vectors using a plurality of low-resolution touch-image data frames, aligning sensing data corresponding to an object detected in the low-resolution touch-image data frames using the motion vectors to generate an overlapped touch-image data frame, generating high-resolution data corresponding to the detected object using the overlapped touch-image data frame and detecting the touch position and generating touch position data of the detected object using the high-resolution touch position data corresponding to the detected object.

Method of processing touch-sensor data and apparatus for performing the same

An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.

Information detection display

A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.

Touch sensing substrate and method of manufacturing the same

An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line.

Optical sensor

A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.

Display device with improved sensing mechanism

A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film.

Thin film transistor array panel and method for manufacturing the same

Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

Sensor array substrate and method of fabricating the same

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Suwon-si, South Korea

Dae-Cheol Kim