Samsung Electronics Co., Ltd.

Dabok Jeong

Jonghan Lee

Seonghwa Park

Jaehyun Lee

Jongha Park

Hongbae Park

Minseok Jo

Jaehoon Woo

A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern and the second gate pattern being spaced apart from each other, and a separation pattern that separates the first gate pattern and the second gate pattern from each other. The first gate pattern includes a first high-k dielectric pattern and a first metal-containing pattern on the first high-k dielectric pattern, the first metal-containing pattern covering a sidewall of the first high-k dielectric pattern. The second gate pattern includes a second high-k dielectric pattern and a second metal-containing pattern on the second high-k dielectric pattern, and the separation pattern is in direct contact with the first metal-containing pattern and spaced apart from the first high-k dielectric pattern.

Semiconductor device including fin field effect transistor with separation layer

An integrated circuit semiconductor device includes a first region including a first transistor and a second region in contact with the first region in a second direction. The first transistor includes a first active fin extending in a first direction, a first gate dielectric layer extending from the first active fin onto a first isolation layer in the second direction, and a first gate electrode on the first gate dielectric layer. The second region includes a second transistor including a second active fin extending in the first direction, a second gate dielectric layer extending from the second active fin onto a second isolation layer in the second direction, and a second gate electrode on the second gate dielectric layer. The integrated circuit semiconductor device includes a gate dielectric layer removal region proximate a boundary between the first region and the second region.

Integrated circuit semiconductor device and method of manufacturing the same

Semiconductor device including fin field effect transistor

Growing community of inventors

Hwaseong-si, South Korea

Dabok Jeong