The 13Th Research Institute of China Electronics Technology Group Corporation

Dabao Yang

Zhihong Feng

Shixiong Liang

Lisen Zhang

Xiangyang Zhao

Dong Xing

Junlong Wang

Peng Xu

An unbalanced terahertz frequency doubler circuit with power handling capacity is provided, and the circuit includes a RF input waveguide, a quartz substrate and a RF output waveguide, where one end of the quartz substrate is disposed in a waveguide groove of the RF input waveguide and the other end of the quartz substrate is disposed in a waveguide groove of the RF output waveguide, where an input transition microstrip is disposed on the quartz substrate, and one end of the transition microstrip is connected to an output transition microstrip sequentially through a first transmission microstrip, a low pass filter, a RF matching microstrip and a second transmission microstrip, where anodes of four GaAs-based terahertz frequency multiplier diode groups are connected to the RF matching microstrip, and a cathode at the outermost position of each of the GaAs-based terahertz frequency multiplier diode groups is connected to a grounding quartz strip.

Unbalanced terahertz frequency doubler circuit with power handling capacity

Growing community of inventors

Hebei, China

Dabao Yang