Taiwan Semiconductor Manufacturing Comp. Ltd.

Da-Yuan Shih

Chen-Hua Douglas Yu

Chih-Hang Tung

Yi-Li Hsiao

Su-Chun Yang

Tung-Liang Shao

Hao-Yi Tsai

Mirng-Ji Lii

Chun Hui Yu

Chung-Jung Wu

Hsiao-Yun Chen

Chien-Hsun Lee

Ming-Chung Sung

Yung Ching Chen

Hsin-An Shen

A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.

Interconnect crack arrestor structure and methods

A method includes forming a plurality of metal posts. The plurality of metal posts is interconnected to form a metal-post row by weak portions between neighboring ones of the plurality of metal posts. The weak portions include a same metal as the plurality of metal posts. A majority of each of the plurality of metal posts is separated from respective neighboring ones of the plurality of metal posts. An end portion of each of the plurality of metal posts is plated with a metal. The plurality of metal posts is disposed into a metal post-storage. The method further includes retrieving one of the metal posts from a metal-post storage, and bonding the one of the metal posts on a metal pad.

Metal post bonding using pre-fabricated metal posts

A method of producing a solder bump joint includes heating a solder bump comprising tin above a melting temperature of the solder bump, wherein the solder bumps comprises eutectic Sn&#x2014;Bi compound, and the eutectic Sn&#x2014;Bi compound is free of Ag. The method further includes stretching the solder bump to increase a height of the solder bump, wherein stretching the solder bump forms lamellar structures having a contact angle of less than 90&#xb0;. The method further includes cooling down the solder bump.

Solder bump stretching method for forming a solder bump joint in a device

A method of multi-chip wafer level packaging comprises attaching a first semiconductor die to a top side of a wafer, forming a first reconfigured wafer by embedding the first semiconductor die into a first photo-sensitive material layer, forming a first group of through assembly vias in the first photo-sensitive material layer, attaching a second semiconductor die to the first photo-sensitive material layer, forming a second photo-sensitive material layer on top of the first photo-sensitive material layer, wherein the second semiconductor die is embedded in the second photo-sensitive material layer and forming a second group of through assembly vias in the second photo-sensitive material layer.

Method of multi-chip wafer level packaging

A method includes placing a plurality of first package components over second package components, which are included in a third package component. First metal connectors in the first package components are aligned to respective second metal connectors of the second package components. After the plurality of first package components is placed, a metal-to-metal bonding is performed to bond the first metal connectors to the second metal connectors.

Two-step direct bonding processes and tools for performing the same

A method includes heating a solder bump above a melting temperature of the solder bump. The solder bump is stretched to increase a height of the solder bump. The solder bump is cooled down to form a solder bump joint in an electrical device.

Solder bump joint in a device including lamellar structures

Method for manufacturing a plurality of metal posts

Some embodiments of the present disclosure relate to an apparatus and method to form a pattern of solder bumps. A solder paste is applied a plate comprising a pattern of holes, where each hole is partially filled by a piston attached to a movable stage. The remainder of the holes are filled by applying a force to the solder paste with a first solder paste application tool. A second solder paste application tool then removes excess paste from the front surface of the plate. The solder paste is then disposed onto a surface of a substrate by moving the movable stage, which fills a larger portion of each hole with a piston, forces the solder paste out of each hole, and forms pattern of solder paste on the surface of the substrate. The pattern of solder paste is then subjected to additional processing to form a pattern of solder bumps.

Indirect printing bumping method for solder ball deposition

Disclosed embodiments include wire joints and methods of forming wire joints that can enable realization of fine pitch joints and collapse control for various packages. A first embodiment is a structure comprising a first substrate, a second substrate, and a wire joint. The first substrate comprises a first bonding surface, and the second substrate comprises a second bonding surface. The first bonding surface is opposite and faces the second bonding surface. The wire joint is attached to and between the first bonding surface and the second bonding surface.

Joint structure for substrates and methods of forming

Disclosed herein is a system and method for mounting packages by forming one or more wire loop interconnects, optionally, with a wirebonder, and mounting the interconnects to a mounting pad on a first substrate. A first and second stud ball may each have at least one flat surface be disposed on a single mounting pad, and a wire having a bend region and forming a loop may be disposed between the stud balls. The stud balls may be formed from a deformed mouthing node formed on a wire. The loop may be mounted on a mounting pad on a first substrate and a second substrate may be mounted on the loop via a conductive material such as solder.

Looped interconnect structure

A three dimensional (3D) chip stack includes a first chip bonded to a second chip. The first chip includes a first bump structure overlying the first substrate, and the second chip includes a second bump structure overlying the second substrate. The first bump structure is attached to the second bump structure, and a joining region is formed between the first bump structure and the second bump structure. The joining region is a solderless region which includes a noble metal.

Three-dimensional chip stack and method of forming the same

A multi-chip wafer level package comprises three stacked semiconductor dies. A first semiconductor die is embedded in a first photo-sensitive material layer. A second semiconductor die is stacked on top of the first semiconductor die wherein the second semiconductor die is face-to-face coupled to the first semiconductor die. A third semiconductor die is back-to-back attached to the second semiconductor die. Both the second semiconductor die and the third semiconductor die are embedded in a second photo-sensitive material layer. The multi-chip wafer level package further comprises a plurality of through assembly vias formed in the first photo-sensitive material layer and the second photo-sensitive material layer.

Multi-chip wafer level package

Methods for forming through vias in an integrated circuit package are disclosed. A substrate having a first surface is covered with an encapsulation layer of uncured material; the method includes inserting an upper mold tool having a first plurality of pillars into the encapsulation layer to imprint through vias extending to the first surface of the substrate; curing the encapsulation layer and the through vias; removing the upper mold tool from the encapsulation layer; and disposing conductor material within the through vias to make electrical connectors within the through vias. In additional methods, a method for forming an encapsulation layer using an upper and lower mold tool to form through vias and a mold cavity is disclosed.

Growing community of inventors

Hsin-Chu, Taiwan

Da-Yuan Shih