Skhynix Inc.

Da Woon Han

Won Jae Choi

According to the present technology, a memory device may include memory cells configured to be programmed so that each of the memory cells has a threshold voltage corresponding to any one of a plurality of program states, a peripheral circuit configured to perform a read operation or a program operation on the memory cells, and control logic configured to control the peripheral circuit to perform a test read operation of reading the memory cells using a test read voltage that is any one read voltage among preset default read voltages, and perform a refresh program operation of applying a refresh program voltage to some memory cells among the memory cells according to the number of memory cells having a threshold voltage greater than the test read voltage.

Growing community of inventors

Icheon-si, South Korea

Da Woon Han