Samsung Electronics Co., Ltd.

Da-won Jeong

Jae-Ho Kim

Jae-hyun Yoo

Ui-hui Kwon

Kang-hyun Baek

Jun-hyeok Kim

Kyu-ok Lee

A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.

Growing community of inventors

Hwaseong-si, South Korea

Da-won Jeong