Nxp B.v.

Da-Wei Lai

Wei-Jhih Tseng

Gijs Jan De Raad

Guido Wouter Willem Quax

Taede Smedes

Stephen John Sque

Dolphin Abessolo Bidzo

Maarten Jacobus Swanenberg

Jan Claes

Wilhelmus Cornelis Maria Peters

An ESD protection device including a PNP transistor connected to an input pad, a diode connected to the PNP transistor and connected to an output pad, and an NMOS transistor connected to the PNP transistor and the output pad, wherein the diode, PNP transistor, and NMOS transistor are configured to route different levels of an electrostatic discharge (ESD) current pulse from the input pad to the output pad.

Gate-lifted NMOS ESD protection device

Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes a first bipolar device connected to a first node, a second bipolar device connected to the first bipolar device and to a second node, and a metal-oxide-semiconductor (MOS) device connected to the first and second nodes and to the first and second bipolar devices and configured to shunt current in response to an ESD pulse received between the first and second nodes. The first bipolar device, the second bipolar device, and the MOS device are formed on a deep well structure. Other embodiments are also described.

Device and method for electrostatic discharge (ESD) protection

Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated with one another and include a common region that is shared by the BJT and the FET. The BJT and FET collectively bias the common base region and prevent triggering of the BJT by causing a potential of the common base region to follow a potential of one of the terminals of the BJT in response to an excessive but tolerable non-ESD voltage change at one or more of the terminals.

Electrostatic discharge protection apparatuses

Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes three or more bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and a diode connected in series with the three or more bipolar transistors and one of the first and second nodes. Each of the three or more bipolar transistors includes a collector comprising collector components, an emitter comprising emitter components, and a base structure comprising a substrate region or an active region. The emitter components are alternately located with respect to the collector components. The substrate region or the active region surrounds the collector components and the emitter components. Other embodiments are also described.

Electrostatic discharge (ESD) protection device and method for operating an ESD protection device

Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes stacked first and second PNP bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and an NMOS transistor connected in series with the stacked first and second PNP bipolar transistors and the second node. An emitter and a base of the second PNP bipolar transistor are connected to a collector of the first PNP bipolar transistor. A gate terminal of the NMOS transistor is connected to a source terminal of the NMOS transistor. Other embodiments are also described.

An apparatus can include a first circuit that is configured to provide electrostatic discharge (ESD) protection against an ESD pulse applied between a first node and a second node. The first circuit includes a series stack of bipolar transistors that are configured to shunt current between the first and second nodes in response to the ESD pulse; and a diode connected in series with the stack of bipolar transistors and configured to lower a snapback holding voltage of the first circuit when shunting current between the first and second nodes.

Electrostatic discharge protection with integrated diode

Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bipolar transistor device connected between a first node and a second node, a series protection device connected in series with the bipolar transistor device, and a diode device connected between the second node and a third node. A drain terminal of an NMOS device to be protected is connectable to the first node. A body of the NMOS device to be protected is connectable to the second node. A source terminal of the NMOS device to be protected is connectable to the third node. The diode device and the bipolar transistor device are configured to form a parasitic silicon controlled rectifier. Other embodiments are also described.

A bipolar junction transistor is configured to provide electrostatic discharge (ESD) protection for an integrated circuit. The bipolar junction transistor includes a substrate configured to function as a gate for the bipolar junction transistor. At least one drain finger extends in a first direction on a first surface of the substrate and is configured to function as a collector for the bipolar junction transistor. At least one source finger extends in the first direction on the first surface of the substrate and is configured to function as an emitter for the bipolar junction transistor. The at least one source finger includes a pickup region that is configured to set a substrate potential.

Electrostatic discharge protection

Semiconductor devices with cross-domain electrostatic discharge (ESD) protection and related fabrication methods are provided. An exemplary semiconductor device includes first domain circuitry, second domain circuitry, and an interface coupled between an output node of the first domain driver circuitry and second domain receiver circuitry. The receiver circuitry includes a transistor having a gate electrode coupled to the interface, with a body electrode of the transistor being coupled to protection circuitry of the first domain circuitry. The body electrode is effectively biased to a reference voltage node of the first domain by the protection circuitry in response to an ESD event to protect the gate oxide of the transistor from a potentially damaging ESD voltage.

Cross-domain ESD protection

A semiconductor device and method. The device includes a first domain and a second domain each having a power rail and a ground rail. The device further includes a signal line connected between the first domain and the second domain. The device also includes an electrostatic discharge protection circuit for providing cross-domain ESD protection. The protection circuit includes a blocking transistor connected between the first domain power rail and the signal line. The protection circuit also includes a power rail clamp connected between the first domain power rail and the first domain ground rail. The power rail clamp is operable to apply a control signal to a gate of the blocking transistor to switch it on during normal operation and to switch it off during an ESD event. The power rail clamp is operable during the ESD event to conduct an ESD current.

ESD protection circuit for providing cross-domain ESD protection

A silicon controlled rectifier (SCR) circuit is configured to shunt electrostatic discharge (ESD) current from a node to a reference voltage. The SCR circuit includes a first bipolar PNP transistor having a first emitter connected to the node, a first base, and a first collector. A second bipolar NPN transistor has a second collector sharing a first region with the first base, a second base sharing a second region with the first collector, and an emitter electrically connected to the reference voltage. A guard region is configured and arranged to delay triggering of the SCR circuit in response to an ESD event by impeding current flow in the second region.

Electrostatic discharge protection using a guard region

An electrostatic discharge power rail clamp circuit and an integrated circuit including the same. The power rail clamp circuit includes a first power rail, a second power rail and a first node. The circuit further includes an n-channel field effect transistor having a source and drain located in an isolated p-well in a semiconductor substrate. The drain is connected to the first power rail. The source and isolated p-well are connected to the first node. The circuit also includes a capacitor connected between the first node and the second power rail. The circuit further includes a resistor connected between the first power rail and the first node. The circuit also includes an inverter for controlling the gate of the field effect transistor, wherein the inverter has an input connected to the first node. The circuit further a silicon controlled rectifier connected between the first node and the second power rail.

Electrostatic discharge power rail clamp circuit

An electrostatic discharge protection device including a silicon controlled rectifier. In one example, the silicon controlled rectifier includes a first n-type region located in a semiconductor substrate. The silicon controlled rectifier also includes a first p-type region located adjacent the first n-type region in the semiconductor substrate. The silicon controlled rectifier further includes an n-type contact region and a p-type contact region located in the first n-type region. The silicon controlled rectifier also includes an n-type contact region and a p-type contact region located in the first p-type region. The silicon controlled rectifier further includes a blocking region having a higher resistivity than the first p-type region. The blocking region is located between the n-type contact region and the p-type contact region in the first p-type region for reducing a trigger voltage of the silicon controlled rectifier.

Electrostatic discharge protection device comprising a silicon controlled rectifier

An ESD protection device for shunting an electrostatic discharge current from a first node to a second node, and an integrated circuit including the same. The device includes a first bipolar transistor having a collector and an emitter located in a first n-type region. The emitter of the first transistor is connected to the first node. The device also includes a second bipolar transistor having a collector and an emitter located in a second n-type region. The emitter of the second transistor is connected to the collector of the first bipolar transistor. The device further includes a pn junction diode including a p-type region located in a third n-type region. The p-type region of the diode is connected to the collector of the second bipolar transistor and the third n-type region is connected to the second node.

Electrostatic discharge protection device

Embodiments of a method for providing electrostatic discharge (ESD) protection for an Input/Output (I/O) device, an ESD protection device for an I/O device, and an I/O device are described. In one embodiment, a method for providing ESD protection for an I/O device involves activating a switch device to turn off the I/O device during an ESD event and deactivating the switch device to turn on the I/O device in the absence of an ESD event. Other embodiments are also described.

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Nijmegen, Netherlands

Da-Wei Lai