Rhodia Operations

Other

Chartered Semiconductor Manufacturing Ltd (corporation)

Specialty Operations France

Da Wei Jin

Hai Zhou Zhang

Nikolay Christov

Lin He

Yong Meng Lee

Galder Cristobal

Siow Lee Chwa

David Vigar

Mau Lam Lai

The present invention relates to a method for enhancing fragrance or perfume longevity of a composition by adding to the composition (a) a quaternary ammonium compound; (b) a cationic polysaccharide; (c) a nonionic polysaccharide; and (d) a fragrance material or perfume. In particular, the quaternary ammonium compound is a biodegradable quaternary ammonium compound. The composition has improved perfume longevity.

Method of use of composition comprising a quaternary ammonium compound, a cationic polysaccharide and a nonionic polysaccharide

The present invention relates to a composition, in particular, a fabric conditioning composition, comprising at least a quaternary ammonium compound, a cationic polysaccharide and a nonionic polysaccharide. In particular, the quaternary ammonium compound is a biodegradable quaternary ammonium compound. The composition has excellent softening performance and improved perfume longevity.

Composition comprising a quaternary ammonium compound, a cationic polysaccharide and a nonionic polysaccharide

The present invention relates to a composition, in particular, a fabric conditioning composition, comprising at least a quaternary ammonium compound, a cationic polysaccharide, a nonionic polysaccharide and a fragrance material or perfume. In particular, the quaternary ammonium compound is a biodegradable quaternary ammonium compound. The composition has excellent softening performance and improved perfume longevity.

Composition comprising a quaternary ammonium compound, a cationic polysaccharide, a nonionic polysaccharide and a fragrance material or perfume

The present invention relates to a composition comprising: (a) a bis-(2-hydroxypropyl)-dimethylammonium methyl-sulphate fatty acid ester having an average chain length of the fatty acid moieties of from 12 to 30 carbon atoms; (b) a cationic poly saccharide; and (c) a nonionic polysaccharide. The present invention also relates to the method of use of the composition.

Composition containing ester quat, cationic polysaccharide and nonionic polysaccharide

The present invention relates to method for preparing composition containing at least a quaternary ammonium compound, a cationic polysaccharide, a fragrance material or perfume, a nonionic surfactant, and optionally a nonionic polysaccharide. The method notably comprises a step of preparing a premix of the fragrance material or perfume and the nonionic surfactant. Said composition may notably be used for fabric conditioning.

Method for preparing stable composition with perfume

The present invention relates to a method for conditioning a fabric comprising the step of contacting the fabric with an aqueous medium comprising a composition, wherein the composition comprises: (a) a quaternary ammonium compound; (b) a cationic polysaccharide; and (c) a nonionic polysaccharide. In particular, the quaternary ammonium compound is a biodegradable quaternary ammonium compound. The composition has excellent softening performance and improved perfume longevity. The present invention also relates to use of said composition for conditioning a fabric.

The present invention provides a solid composition comprising (a) a quaternary ammonium compound and (b) between 9 wt % and 77 wt % of a polysaccharide based on the total weight of the solid composition. The solid composition showed excellent stability. The present invention also provides a process for preparing the solid composition and a liquid composition comprising said solid composition, and methods for conditioning a fabric by using the solid composition and the liquid composition as well.

Solid composition comprising a quaternary ammonium compound and polysaccharide, the process and use thereof

The present invention relates to a composition, notably a fabric conditioning composition, comprising at least: a quaternary ammonium compound, two different cationic polysaccharides; and a non-ionic polysaccharide. The composition has excellent conditioning performance combined with good stability.

Compositions comprising a quat and a mixture of a nonionic and two cationic polysaccharides

Provided is a composition, notably a fabric conditioning composition, comprising (a) a quaternary ammonium compound; (b) a cationic polysaccharide; (c) a first non-ionic polysaccharide; and (d) a second non-ionic polysaccharide, wherein the second non-ionic polysaccharide is different from the first non-ionic polysaccharide and the second non-ionic polysaccharide has a Molar Substitution (MS) in the range of 0.2 to 1.8.

Composition comprising a quat, cationic polysaccharide, and a mixture of nonionic polysaccharides

The present invention provides a solid composition comprising a polysaccharide and a hydrophobic compound having a melting point of between 30&#xb0; C. and 90&#xb0; C. The solid composition may further comprise a quaternary ammonium compound, wherein the weight ratio of the polysaccharide and the hydrophobic compound is between 1:50 and 50:1. Preferably, the solid composition is substantially free or completely free of water. The solid composition shows excellent stability at a temperature up to 45&#xb0; C. The present invention also provides a process for preparing the solid composition and a liquid composition comprising said solid composition, and a method for conditioning a fabric by using said solid composition or said liquid composition as well.

Solid composition comprising a polysaccharide and a hydrophobic compound, the process and use thereof

A method of forming a double gated SOI channel transistor comprising the following steps. A substrate having an SOI structure formed thereover is provided. The SOI structure including a lower SOI silicon oxide layer and an upper SOI silicon layer. The SOI silicon layer is patterned to form a patterned silicon layer. A dummy layer is formed over the SOI silicon oxide layer and the patterned SOI silicon layer. The dummy layer is patterned to form a damascene opening therein exposing: a portion of the lower SOI silicon oxide layer; and a central portion of the patterned SOI silicon layer to define a source structure and a drain structure. Patterning the exposed lower SOI silicon oxide layer to form a recess. Gate oxide layer portions are formed around the exposed portion of the patterned SOI silicon layer. A planarized layer portion is formed within the final damascene opening. The planarized layer portion including a bottom gate and a top gate. The patterned dummy layer is removed to form the double gated SOI channel transistor.

Growing community of inventors

Singapore, Singapore

Da Wei Jin