Seoul Viosys Co., Ltd.

Seoul Semiconductor Co., Ltd.

Da Hye Kim

Chang Yeon Kim

Jong Kyun You

Joon Hee Lee

Dae Wook Kim

Tae Hyuk Im

Yoon Seop Lee

Jae Hyun Park

Young Wug Kim

Byoung Kyu Park

Sang Hong Lee

Yeo Jin Yoon

Ki Bum Nam

Seoung Ho Jung

Young Jun Song

Chang Ik Im

Hong Chul Lim

Jong Min Jang

Chae Hon Kim

Jae Hee Lim

Tae Gyun Kim

Seon Min Bae

Yang Sik Cho

Chang Ik Kim

A backlight unit includes one or more light sources operable to emit light and a light guide plate arranged adjacent to the one or more light sources, reflected lights exiting the one or more light sources via the second surfaces and entering the light guide plate. A light source includes a light emitting device having a substrate and a semiconductor stack disposed on the substrate. The reflector is structured and positioned to block light emitted from a first surface of the light emitting device by reflecting the light emitted from the first surface toward second surfaces of the light source.

Light source module and backlight unit having the same

A backlight unit including a light guide plate, a first light source and a second light source adjacent to the light guide plate, each of the light sources including a light emitting diode chip including a substrate and a semiconductor stack disposed on the substrate, a wavelength conversion layer covering the light emitting diode chip, and a plurality of reflectors disposed on at least two opposing side surfaces of the light emitting diode chip, in which at least a portion of the wavelength conversion layer of the first light source facing the second light source is exposed by the reflectors.

A light-emitting device includes a substrate including a first electrode group and a second electrode group, a first light emitting unit, a second light emitting unit, and a side wall. The first light emitting unit is provided on the upper surface of the substrate and electrically connected to the first electrode group. The second light emitting unit is provided on the upper surface of the substrate and electrically connected to the second electrode group. The side wall surrounds the first light-emitting unit and the second light-emitting unit. The first light emitting unit and the second light emitting unit are arranged side by side such that a separation space between the first light emitting unit and the second light emitting unit is smaller than a space between the second light emitting unit and an outer peripheral surface of the side wall.

Light emitting device and vehicular lamp comprising same

A light emitting device and a vehicular lamp are provided. The light emitting device comprises: a first light emitting unit; a second light emitting unit separated from the first light emitting unit; and a sidewall surrounding side surfaces of the first and second light emitting units while adjoining the side surfaces of the first and second light emitting units, wherein the first light emitting unit and the second light emitting unit emit light have different peak wavelengths.

Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

Light-emitting device with improved light extraction efficiency

A light emitting device including: a substrate; first and second light emitting units disposed on the substrate separate from each other and respectively including first and second light emitting diodes, on which first and second wavelength converters are respectively disposed; first and second bonding layers interposed between the substrate and the first and second light emitting units, respectively; a sidewall disposed surrounding and adjoining side surfaces of the first and second light emitting units; and a filler evenly disposed in the sidewall and capable of reflecting light from the first and second light emitting units, wherein the substrate includes plurality electrodes, wherein a first portion of the sidewall directly contacts both of the first light emitting diode and the second light emitting diode, and wherein a second portion of the sidewall separates and directly contacts the first wavelength converter and the second wavelength converter.

Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

High efficiency light emitting diode and method of fabricating the same

A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first semiconductor layer; at least one groove formed on the lower surface of the light emitting structure; a second electrode located on at least the lower surface of the second semiconductor layer, and electrically connected with the second semiconductor layer; an insulating layer partially covering the second electrode and the lower surface of the light emitting structure, and including at least one opening corresponding to the at least one groove; and a first electrode electrically connected to the first semiconductor layer exposed to the at least one groove, and at least partially covering the insulating layer, wherein the second electrode includes a second contact layer including an ohmic contact layer, and the ohmic contact layer is disposed in the shape of a plurality of islands.

Light emitting diode and manufacturing method thereof

The present disclosure relates to a light-emitting device and a vehicular lamp including the same. The light-emitting device may include a light-emitting unit and a sidewall. The light emitting unit may include a light-emitting element. The sidewall may surround a side of the light-emitting unit and adjoin the side of the light-emitting unit. The light-emitting element may include at least two light-emitting cells grown on a single growth substrate and may be electrically connected to one another.

Light emitting device and vehicular lamp including the same

A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

Light-emitting diode and method for manufacturing same

A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.

A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.

High efficiency light emitting diode

Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Growing community of inventors

Ansan-si, South Korea

Da Hye Kim