Samsung Electronics Co., Ltd.

Da-Hee Lee

Jung-Dae Park

Seung-Ki Chae

Tae-Hyo Choi

Kyung-Ho Kim

Dong-Ki Min

Hye-Won Lee

Pil-Kwon Jun

Yun-Seok Choi

Hun-Jung Yi

Gi-ppeum Choi

Pil-kwon Jun

Kwang-Shin Lim

Seung-Uk Lee

Seong-Won Jo

Yo-Hwan Noh

Chae-sung Kim

Dae-Kwan Kim

Bo-Yong Lee

Min-Kyoung Yoon

Display screen or portion thereof with graphical user interface

A crosstalk processing module configured to process a crosstalk of an image signal includes a correction element generation unit, a storage, and a crosstalk correction check unit. The correction element generation unit receives the image signal and input information associated with at least a size of the image signal and generates seed values and correction parameters which are used to correct the crosstalk, based on the input information and a representative channel image signal obtained by separating the image signal with respect to color. The storage stores the seed values and the correction parameters. The crosstalk correction check unit receives the image signal, receives the seed values and the correction parameters from the storage, corrects the crosstalk, and outputs a final image signal and pass/fail information indicating a pass or fail of the correction of the crosstalk based on a plurality of reference values.

Crosstalk processing module, method of processing crosstalk and image processing system

A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Method of cleaning a quartz part

A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Methods of manufacturing a semiconductor device using compositions for etching copper

In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

Semiconductor substrate cleaning methods, and methods of manufacture using same

Growing community of inventors

Pyeongtaek-si, South Korea

Da-Hee Lee