Taiwan Semiconductor Manufacturing Comp. Ltd.

D T Lee

Yu-Lien Huang

Ching-Feng Fu

Ming-Huan Tsai

Yi-Chen Lo

Tsai-Chun Li

Cheng-Hua Yang

A method of forming a semiconductor device includes forming a source/drain region and spacers on a substrate. The method further includes forming an etch stop layer on the spacers and the source/drain region and forming a gate structure between the spacers. The method further includes etching back the gate structure, etching back the spacers and the etch back layer, and forming a gate capping structure on the etched back gate structure, spacers, and etch stop layer.

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Hsinchu, Taiwan

D T Lee