Instytut Wysokich Cisnien Polskiej Akademii Nauk

Centrum Badan Wysokocisnieniowych Polskiej Akademii Navk

Uniwersytet Warszawski

Czeslaw Skierbiszewski

Tadeusz Suski

Sylwester Porowski

Izabella Grzegory

Piotr Perlin

Michal Leszczynski

Jan Jun

Michal Leszczyński

Przemyslaw Wiśniewski

Michal Boćkowski

Henryk Teisseyre

Jacek Baranowski

Marcin Siekacz

Elzbieta Litwin-Staszewska

Anna Feduniewicz-Zmuda

Krzesimir Szkudlarek

Aleksander Rodek

Piotr Kossacki

Julia Slawinska

Kacper Oreszczuk

Pawel Wolny

Krzesimir Nowakowski-Szkudlarek

Mikolaj Chlipala

Mikolaj Zak

Grzegorz Muziol

Mateusz Hajdel

Marta Sawicka

Natalia Fiuczek

The laser diode comprising crystalline substrate () where set of subsequent n-type layers, set of optically active layers () and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (), bottom n-type cladding layer () and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer () and p-type contact layer (). The electron blocking layer comprises In, AlGa, N alloy doped with magnesium where 1&#x2267;x&#x3e;0.001 a 1&#x2267;y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (), set of optically active layers () and set of p-type layers () where the p-type waveguide layer () and p-type contact layer () is deposited with presence of indium in plasma assisted molecular beam epitaxy method.

Nitride based laser diode and method of manufacturing nitride based laser diode

The subject of the Invention is the method of fabrication of nitride semiconductor A,B,such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural quality. The semiconductors obtained by this method are applied in the construction of light emitting devices, light detectors and electric current amplifiers such as for example: highly efficient blue and green light diodes, laser diodes and high power lasers, ultraviolet detectors and high temperature field transistors. The method according to the Invention is characterized by the fact that the homoepitaxial or heteroepitaxial layers of nitride semiconductors A,B,are deposited on the conductive substrate after the introductory processing or isolating substrate, and after that the so prepared structures are located in high pressure diffusional chamber filled with the one or multi-component gas, compressed to pressure in the range 1000-20000 bar, and annealed in the temperature 1000-1800 &deg; C. in the prescribed time in the presence of the dopant from the external and/or internal source.

Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity

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Warsaw, Poland

Czeslaw Skierbiszewski