Broadcom Corporation

Cyrus Afghahi

Sami Issa

Esin Terzioglu

Gil I Winograd

Ali Anvar

Zeynep M Toros

The present invention relates to a system and method for providing redundancy in a hierarchically memory, by replacing small blocks in such memory. The present invention provides such redundancy (i.e., replaces such small blocks) by either shifting predecoded lines or using a modified shifting predecoder circuit in the local predecoder block. In one embodiment, the hierarchal memory structure includes at least one active predecoder adapted to be shifted out of use; and at least one redundant predecoder adapted to be shifted in to use.

Block redundancy implementation in heirarchical ram's

The present invention relates to a system and method for providing redundancy in a hierarchically memory, by replacing small blocks in such memory. The present invention provides such redundancy (i.e., replaces such small blocks) by either shifting predecoded lines or using a modified shifting predecoder circuit in the local predecoder block. In one embodiment, the hierarchal memory structure includes at least one redundant predecoder adapted to be shifted in for at least one active predecoder of a plurality of predecoders adapted to be shifted out.

Block redundancy implementation in heirarchical RAM'S

The present invention relates to a system and method for providing distributed, highly configurable modular predecoding. The method comprising forming a hierarchical memory structure including forming a first portion of the hierarchical memory structure adapted to perform a first layer of address predecoding. The method further comprises forming a second portion of the hierarchical memo structure interacting with at least the first portion and adapted to perform a second layer of address predecoding.

Distributed, highly configurable modular predecoding

A system-on-chip (SOC) device or a random access memory (RAM) chip includes a RAM block. The RAM block includes memory cells, each of which has three transistors. Each memory cell is coupled to both a read bit line and a write bit line. A transparent continuous refresh mechanism has been implemented to read the content of a memory cell and re-write it back to the memory cell without disturbing the access (read/write) cycle, making refresh operations transparent to the system level. The continuous refresh mechanism includes a collision detection mechanism to prevent writing and reading the same memory cell at the same time.

Memory device having simultaneous read/write and refresh operations with coincident phases

The present invention relates to a system and method for providing distributed, highly configurable modular predecoding. The system includes a hierarchical memory structure, including a predecoder adapted to perform a first layer of address predecoding and at least one local predecoder interacting with the global predecoder and adapted to perform a second layer of address predecoding.

Transparent continuous refresh RAM cell architecture

Block redundancy implementation in heirarchical RAM's

Memory circuit capable of simultaneous writing and refreshing on the same column and a memory cell for application in the same

A random access memory cell ( ) includes a first conductor line ( ) and a second conductor line ( ). A native device ( ) is arranged to store charge. A high voltage threshold transistor ( ) couples the native device to the first and second conductors.

Growing community of inventors

Mission Viejo, CA, United States of America

Cyrus Afghahi