Nikkiso Company Limited

Soko Kagaku Co., Ltd.

Cyril Pernot

Yusuke Matsukura

Tetsuhiko Inazu

Akira Hirano

Yuta Furusawa

Mitsugu Wada

Noritaka Niwa

Satoshi Kamiyama

Hiroshi Amano

Haruhito Sakai

Myunghee Kim

Kazufumi Takao

Michiko Kaneda

Miho Matsuzaki

A nitride semiconductor light-emitting element includes an n-type semiconductor layer, an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light, an electron blocking layer formed on the active layer, and a p-type semiconductor layer formed on the electron blocking layer. Pits are formed in the active layer and the electron blocking layer. A density of the pits on an upper surface of the electron blocking layer is not less than 7.0×10pits/cmand not more than 1.8×10pits/cm.

Nitride semiconductor light-emitting element

A method for manufacturing a nitride semiconductor light-emitting element includes growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70%, and growing a p-type contact layer with an Al composition ratio of not more than 10%. A flow rate ratio F/Fis a p/III ratio and a flow rate ratio F/Fis a V/III ratio. The p-type cladding layer is grown in the growing the p-type cladding layer at a growth rate of not more than 2.5 nm/min, a p/III ratio of not less than 0.0002 and not more than 0.0400 and a VIII ratio of not more than 7000. The p-type contact layer is grown in the growing the p-type contact layer at a growth rate of not more than 3.3 nm/min, a p/III ratio of not less than 0.0200 and a V/III ratio of not less than 10000.

Method for manufacturing nitride semiconductor light-emitting element

A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on the p-type semiconductor layer side relative to the first electron blocking layer and has a lower Al composition ratio than that of the first electron blocking layer. When a total number of the well layers in the active layer is N, a film thickness of the first electron blocking layer is a film thickness d [nm] and an Al composition ratio of the second electron blocking layer is an Al composition ratio x [%], relationships 0.1N+0.9≤d≤0.2N+2.0 and 10N+40≤x≤10N+60 are satisfied.

A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and an electron blocking layer comprising Al and being provided between the active layer and the p-type semiconductor layer. The electron blocking layer partially includes a high Al composition portion in at least one cross section orthogonal to a stacking direction, the high Al composition portion having an Al composition ratio higher than a surrounding portion.

Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element

A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer comprising at least one layer. The at least one layer of the electron blocking layer includes a peak-containing layer having an n-type impurity concentration peak in an n-type impurity concentration distribution along a stacking direction. The n-type impurity concentration peak appears as a local maximum in the n-type impurity concentration distribution along the stacking direction in the peak-containing layer and has an n-type impurity concentration of not less than 10 times a smallest value of the n-type impurity concentration in a region along the stacking direction between positions that are separated from a position of the peak in the stacking direction on both sides in the stacking direction by 10% of a thickness of the peak-containing layer.

A nitride semiconductor light-emitting element outputs ultraviolet light. The nitride semiconductor light-emitting element includes an active layer including a quantum well structure that generates the ultraviolet light, a dislocation suppression structure-containing layer being formed on the active layer and including a dislocation suppression structure that stops or bends a dislocation from the active layer; and a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm.

A nitride semiconductor light-emitting element includes a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light; an electron blocking layer being located on the light-emitting layer and comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer; and a p-type cladding layer being located on the electron blocking layer, comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio, and being doped with a predetermined concentration of a p-type dopant. An interface between the electron blocking layer and the p-type cladding layer is doped with not less than a predetermined amount of an n-type dopant.

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.

A deep ultraviolet light emitting device includes: an electron block layer of a p-type AlGaN-based semiconductor material or a p-type AlN-based semiconductor material provided on a support substrate; an active layer of an AlGaN-based semiconductor material provided on the electron block layer; an n-type clad layer of an n-type AlGaN-based semiconductor material provided on the active layer; an n-type contact layer provided on a partial region of the n-type clad layer and made of an n-type semiconductor material containing gallium nitride (GaN); and an n-side electrode formed on the n-type contact layer. The n-type contact layer has a band gap smaller than that of the n-type clad layer.

Method of manufacturing deep ultraviolet light emitting device

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and an active layer that includes AlGaN and is located on the n-type cladding layer. Si concentration distribution in a direction of stacking the n-type cladding layer and the active layer has a local peak in the active layer.

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN and having a first Al composition ratio, and a multiple quantum well layer in which a plurality (number N) of barrier layers including AlGaN having a second Al composition ratio more than the first Al composition ratio and a plural (number N) well layers having an Al composition ratio less than the second Al composition ratio are stacked alternately in this order, wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side.

Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element

A nitride semiconductor light-emitting element includes an active layer including an AlGaN-based barrier layer, a p-type contact layer located on an upper side of the active layer, and an electron blocking stack body located between the active layer and the p-type contact layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer. The first electron blocking layer is located on the active layer side and has a higher Al composition ratio than an Al composition ratio in the barrier layer. The second electron blocking layer is located on the p-type contact layer side and has a lower Al composition ratio than an Al composition ratio in the barrier layer.

A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15&#xb0; and not more than 50&#xb0;.

Deep ultraviolet light emitting device

A nitride semiconductor light-emitting element includes an active layer that emits ultraviolet light, a p-type AlGaN-based electron blocking stack body that is located on the active layer and has a structure formed by sequentially stacking a first electron blocking layer, a second electron blocking layer and a third electron blocking layer from the active layer side, and a p-type contact layer located on the electron blocking stack body. An Al composition ratio in the second electron blocking layer is lower than an Al composition ratio in the first electron blocking layer, and an Al composition ratio in the third electron blocking layer decreases from the second electron blocking layer side toward the p-type contact layer side.

A semiconductor light-emitting element includes: an n-type clad layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer of an AlGaN-based semiconductor material provided on the n-type clad layer and configured to emit deep ultraviolet light having a wavelength of not shorter than 300 nm and not longer than 360 nm; and a p-type semiconductor layer provided on the active layer. The n-type clad layer is configured such that a transmittance for deep ultraviolet light having a wavelength of 300 nm or shorter is 10% or lower.

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Ishikawa, Japan

Cyril Pernot