Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Cyril Guedj

Norbert Moussy

Jean-Paul Kleider

Yvan Eric Bonnassieux

Eugenie Martinez

José Alvarez

Péré Roca I Cabarrocas

Svetoslav Tchakarov

Eugénie Martinez

The electron affinity of thick dielectrics, of thickness greater than 10 nanometers, is measured by applying a polarization voltage varying between &#x2212;4V and &#x2212;40V, for example, and by taking several measuring points to determine a reference value of the photo-emission threshold (E), applying linear regression to an adjustment straight line () linking the measured thresholds () to the respective values of the square root of the voltage V.

Method for characterisation of dielectric layers by ultraviolet photo-emission spectroscopy

A matrix of detection pixels and a photoelectric detector that includes a matrix of detection pixels and a reading circuit of loads detected by the detection pixels of the matrix. A detection pixel includes a photosensitive semi-conductor area with a first face covered with a first electrode and a second face located opposite the first face and covered with a second electrode. The first electrode includes a metal pattern that can collect the electrical loads generated by the detection pixel. The matrix can be applied, for example, to the creation of sensors used in scanners and photographic apparatuses or digital cameras or biosensors.

Detecting pixel matrix integrated into a charge reader circuit

Assembly of sensors formed as an imager with a detection brick including a photosensitive material, a brick for addressing and optionally processing signals from the sensor(s), an interconnection brick located between the detection brick and the addressing brick, this brick including connection pads, characterized in that the photosensitive material of the detection brick contains polymorphous silicon. The invention also relates to a method for the making of the latter.

Imager having photosensitive material contains polymorphous silicon

This photoelectric detection device comprises a matrix of elementary detectors on an insulating substrate. Each of the elementary detectors has a stack consisting of a lower electrode, a layer of a photosensitive material and a phototransparent upper electrode. The upper electrode is common to all the elementary detectors. Each of the lower electrodes is connected independently of one another to a sense circuit. The lower electrodes are each positioned on an individualized insulating zone, which is raised with respect to the insulating substrate. Furthermore, the upper electrode is not flat and is inserted between two adjacent zones until it reaches a level below that of the lower electrodes.

Photoelectric detection device and method for its production

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Varces Allieres et Risset, France

Cyril Guedj