Semiconductor Components Industries, LLC

Cynthia Trigas

Jeffrey Pearse

Hak-Yam Tsoi

Edouard De Fr&eacute;sart

Irenee M Pages

Rainer Thoma

Quang X Nguyen

A vertically diffused FET ( ) is fabricated on a semiconductor die ( ) that includes an N substrate ( ) and an N epitaxial layer ( ). The FET ( ) has a source region ( ) and a channel region ( ) near a front surface ( ) of the epitaxial layer ( ), and a drain region in the substrate ( ). A trench ( ) extends through the epitaxial layer ( ) to the substrate ( ). A conductive layer ( ) fills the trench ( ), thereby forming a conductive plug ( ) electrically coupled to the substrate ( ). The conductive plug ( ) forms a top side drain electrode of the FET ( ).

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Munich, Germany

Cynthia Trigas