Raytheon Company

Cynthia Robin Nelson Konen

James R Myers

Chad E Boyack

Peter J Drake

James E Faoro

George R Cunnington

Kevin Andrew Paulson

Isis Roche-Rios

Steven N Peterson

A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device.

Semiconductor device thermal connection

Growing community of inventors

Anoka, MN, United States of America

Cynthia Robin Nelson Konen