Glo Ab

Cynthia Lemay

Scott Brad Herner

Daniel Bryce Thompson

Linda T Romano

Carl Patrik Theodor Svensson

A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the substance at a source and causing it to move to the array along a line. The angle between the line followed by the substance and the plane of the support is less than 90&#xb0; when measured from the center of the support. The substance is capable of rendering a portion of the nanowires nonconductive or less conductive compared to before being treated by the substance.

Nanowire sized opto-electronic structure and method for modifying selected portions of same

Various embodiments include methods of fabricating a semiconductor device that include providing a plurality of nanostructures extending away from a support, forming a flowable material layer between the nanostructures, forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask and etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.

Removal of 3D semiconductor structures by dry etching

A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support and extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer, and a plurality of semiconductor shells extending over the respective nanowire cores. Each of the plurality of semiconductor shells includes at least one semiconductor interior shell extending around the respective one of the plurality nanowire cores, and a second conductivity type semiconductor outer shell extending around the at least one semiconductor interior shell. A first electrode layer contacts the second conductivity type semiconductor outer shell of the plurality of semiconductor shells and extends into spaces between the semiconductor shells. The semiconductor interior shell includes a semiconductor foot portion which extends under the first electrode and under the respective second conductivity type semiconductor outer shell on the insulating masking layer in the spaces between the plurality of semiconductor shells.

Nanowire LED structure with decreased leakage and method of making same

A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support, and an insulating mask layer located over the support. The nanowire cores include semiconductor nanowires epitaxially extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer. The device also includes a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, a first electrode layer that contacts the second conductivity type semiconductor shells and extends into spaces between the semiconductor shells, and an insulating layer located between the insulating mask layer and the first electrode in the spaces between the semiconductor shells.

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Santa Clara, CA, United States of America

Cynthia Lemay