Applied Materials, Inc.

Molecular Imprints, Inc.

Canon Nanotechnologies, Inc.

Cynthia B Brooks

Melisa J Buie

Michael Nevin Miller

Walter R Merry

Brigitte C Stoehr

Sidlgata V Sreenivasan

Frank Y Xu

Gerard M Schmid

Alfred W Mak

Niyaz Khusnatdinov

Weijun Liu

Turgut Sahin

Dwayne L LaBrake

Jian Ding

Ajey M Joshi

Yung-Hee Yvette Lee

Jitske Trevor

James A Stinnett

David James Lentz

Jason Regis

Gladys D Quinones

Laura Anne Brown

David J Lentz

Systems and methods for providing multiple replicas from a master template are described. Replicas may be formed having a mesa. In one embodiment, a dummy fill region may be included on master template and/or replicas.

Master template replication

Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.

Critical dimension control during template formation

Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.

Multi-step process for etching photomasks

Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.

Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control

An oxide etching method, particularly applicable to forming through an oxide layer a wineglass shaped contact or via hole of controlled shape. The wineglass hole is particularly useful for eased metal hole filling. The bowl is etched by first etching an anisotropic hole through a mask aperture, and then isotropically etching through the same mask aperture. The relative periods of the anisotropic and isotropic etch determine the lateral-to-vertical dimensions of the bowl. The stem is then etched through the same mask aperture with a strongly anisotropic etch. The isotropic etch may be performed in the same chamber as the anisotropic etch or may advantageously be performed in a separate etch chamber having a remote plasma source.

Oxide plasma etching process with a controlled wineglass shape

A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH.sub.3 F/CF.sub.4 /O.sub.2 recipe and a CH.sub.2 F.sub.2 /CF.sub.4 /O.sub.2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity towards the SiN material. A pins-up scheme is used for simultaneously stripping away backside nitride with topside nitride.

Selective plasma etching of silicon nitride in presence of silicon or

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Austin, TX, United States of America

Cynthia B Brooks