Praxair Technology, Inc.

Other

Cynthia A Hoover

David Michael Thompson

Michael Alexander Lienhard

Neil Andrew Stephenson

Ashwini K Sinha

Douglas Charles Heiderman

Scott Houston Meiere

Michael M Litwin

John D Peck

Garrett R Swindlehurst

Rachael A Masin

William S Kane

Delong Zhang

David C Hoth

Jim D Atwood

David M Thompson

A carbon adsorbent storage and dispensing system is provided with a structurally modified particulate carbon adsorbent designed with optimal volumetric surface area for a certain range of particle sizes. Bulk density and specific surface area are carefully balanced to ensure the volumetric surface area remains within an optimal range to create high performance, as measured by dispensing capacity of the dopant fluid that is reversibly adsorbed onto the structurally modified particulate carbon adsorbent.

Dopant fluid storage and dispensing systems utilizing high performance, structurally modified particulate carbon adsorbents

Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp', where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D, where Dis X; CHX; CHX(C&#x2550;O)CHX; CHXOCHX; CHX(C&#x2550;O)OCHX; or CHXO(C&#x2550;O)CHX; and Cp&#x2032; is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D&#x2032;, where D1&#x2032; is X; CHX; CHX(C&#x2550;O)CHX; CHXOCHX; CHX(C&#x2550;O)OCHX; or CHXO(C&#x2550;O)CHX. Dand D&#x2032; are different from one another. X is a halogen atom or NO; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1&#x2212;c1; c1 is an integer between 0 and 2(a1)+1&#x2212;b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1&#x2212;c2; and c2 is an integer between 0 and 2(a2)+1&#x2212;b2. The process can be used in manufacturing or processing electronic devices.

Deposition processes using group 8 (VIII) metallocene precursors

This invention relates to organometallic precursor compounds represented by the formula i-PrN&#x2550;Ta(NRR)wherein Rand Rare the same or different and are alkyl having from 1 to 3 carbon atoms, provided that (i) when Ris ethyl, then Ris other than ethyl and (ii) when Ris ethyl, then Ris other than ethyl, and a method for producing a film, coating or powder from the organometallic precursor compounds.

Organometallic precursor compounds

Asymmetric, disubstituted metallocene compounds have the general formula CpMCp' where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D; Cp&#x2032; is a second substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D&#x2032;. Dis different from D&#x2032;. Dis X; CHX; CHX(C&#x2550;O)CHX; or CHXOCHX, where X is a halogen atom or nitro group; a1 is an integer between 2 and 8; b1 is an integer between 0 and 2(a1)+1&#x2212;c1; c1 is an integer between 0 and 2(a1)+1&#x2212;b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1&#x2212;c2; and c2 is an integer between 0 and 2(a2)+1&#x2212;b2; and D1&#x2032; is X; CHX; CHX(C&#x2550;O)CHX; or CHXOCHX, where X is a halogen atom or nitro group; a1 is an integer between 1 and 8; b1 is an integer between 0 and 2(a2)+1&#x2212;cl; c1 is an integer between 0 and 2(a1)+1&#x2212;b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1&#x2212;c2; and c2 is an integer between 0 and 2(a2)+1&#x2212;b2. The compounds can be employed as precursors in film deposition processes.

Asymmetric group 8 (VIII) metallocene compounds

A method for producing Group 8 (VIII) metallocene or metallocene-like compounds employs a compound that includes a Cp' anion, such as found, together with a counterion, in a cyclopentadienide or cyclopentadienide-like salt. In one embodiment, the method includes reacting a metal salt, a (Cp) compound, such as a substituted or unsubstituted cyclopentadiene or indene, and a ligand (L) to form an intermediate compound and reacting the intermediate compound with a Cp&#x2032; compound, eg., a cyclopentadienide or cyclopentadienide-like salt, where the metal salt can be is a ruthenium, an osmium or an iron halide or nitrate and L is an electron pair donor. Unsubstituted, mono-substituted as well as symmetrically or asymmetrically di- or multi-substituted metallocenes or metallocene-like compounds can be produced. In another embodiment, unsubstituted or symmetrically substituted metallocenes are formed by reacting MX(PPh)with a Cp&#x2032; compound, where m=3 or 4. The method can be used to form precursors for chemical vapor deposition of thin films.

Methods for making metallocene compounds

This invention relates to liquid cyclopentadienyltrimethylplatinum compounds selected from (isopropylcyclopentadienyl)trimethylplatinum and (tert-butylcyclopentadienyl)trimethylplatinum. This invention also relates to a process for producing a film, coating or powder by decomposing a cyclopentadienyltrimethylplatinum compound precursor selected from (isopropylcyclopentadienyl)trimethylplatinum and (tert-butylcyclopentadienyl)-trimethylplatinum, thereby producing the film, coating or powder. This invention further relates to a one pot method for producing an organometallic compound comprising reacting a metal source compound, an alkylating agent and a cyclopentadienyl compound under reaction conditions sufficient to produce said organometallic compound.

Method for producing organometallic compounds

This invention is directed to a method for producing an alkyl-substituted metallocene complex comprising the steps of mixing a metallocene with a solvent to form a metallocene-solvent mixture; mixing the metallocene-solvent mixture with an effective amount of a metallation reagent to produce a metallated-metallocene; and mixing said metallated-metallocene with an electrophilic alkyl-reagent to form an alkyl-substituted metallocene complex.

Synthesis of substituted ruthenocene complexes

This invention is directed to a method for synthesizing a carbonyl based compound under neat conditions comprising refluxing a metal carbonyl compound with an excess of neutral ligand to produce a first mixture; evaporating any excess neutral ligand from the first mixture to produce a second mixture; and distilling the second mixture to produce the carbonyl based compound.

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Grand, NY, United States of America

Cynthia A Hoover