International Business Machines Corporation

Curtis S Durfee

Kangguo Cheng

Ruilong Xie

Chanro Park

Julien Frougier

Min Gyu Sung

Jay William Strane

Provided is a stacked field-effect transistor (FET). The stacked FET comprises a top device, a bottom device, and a transition region between the top device and the bottom device. The transition region includes a plurality of inner spacers and a first inter-layer dielectric (ILD). The ILD is formed between each of the plurality of inner spacers. The top and bottom devices have a first channel sheet thickness in a gate region and a second channel sheet thickness between inner spacers. The second channel sheet thickness is larger than both the first channel sheet thickness and the first distance.

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Schenectady, NY, United States of America

Curtis S Durfee