Microelectronics and Computer Technology Corporation

Si Diamond Technology, Inc.

Stellar Micro Devices

Stellarray, Incorporated

Curtis Nathan Potter

Harry Kroger

Zvi Yaniv

Uttam Shyamalindu Ghoshal

David A Gibson

Mark F Eaton

Lawrence N Smith

Andrew Carl Miner

Daniel Bruce Bullock

A structure and method for cold weld compression bonding using a metallic nano-structured gasket is provided. This structure and method allows a hermetic package to be formed at lower pressures and temperatures than are possible using bulk or conventional thin-film gasket materials.

Nano-structured gasket for cold weld hermetic MEMS package and method of manufacture

A cold welded hermetic micro or nano package sealed in an inert atmosphere with optional force maintenance means for ensuring permanent closure. A package capcoated with precursor weld material is sealed to a package basecontaining integral devicethen cold welded with an external force mechanism to compress and flow cold seal preform materialcreating a hermetic peripheral seal in an inert or vacuum atmosphere. Arrays of devices can be sealed with individual caps or arrays of caps which are interconnected.

Cold weld hermetic MEMS package and method of manufacture

A swage hermetic sealing of a MEMS or microdevice or nanodevice package using high force. A cutting and flowing edgeis formed on a package cover which is pressed into a mating , integral gasketon a package base. A material extension of the package coveris simultaneously folded under the package base to supply force maintenance for permanent hermaticity. The swage hermetic sealing of single or an array of covers to an extended wafer or substrate is accomplished by a cutting and flowing edge. Permanent force maintenance is achieved through a re-entrant cavityand annular ringon the wafer or substrate.

Hermetic MEMS package and method of manufacture

The present invention provides a glass BGA (ball grid array) including a glass substrate having a plurality of conductive leads, such as thin film metal deposited thereon. A die or chip is mounted in a fixed relationship to the glass substrate, and is often mounted on the glass substrate. The die includes a plurality of I/O pads for providing electrical access to circuitry inside the die. Circuitry is included for connecting the plurality of I/O pads to the plurality of conductive leads on the glass substrate.

Ball grid array package

An apparatus for testing semiconductor devices including probe tips for contacting input/output pads on the device attached to a probe membrane fixed to a package using a layer of elastomeric material. The elastomeric material and use of compliant bump probe tips effect a global planarization for improved electrical contact between the probe assembly and the input/output contacts on the device under test.

Probe head assembly

A coaxial bump for connecting a die to a substrate includes a center post and a ground ring surrounding and shielding the center post. The center post may be a center conductor line, and the ground ring may be generally torus-shaped, nearly closed or completely closed. The coaxial bump provides very low crosstalk in chip-to-substrate interconnections and provides a constant impedance with negligible inductive discontinuity.

Coaxial die and substrate bumps

A method for producing miniature, planar, hermetically sealed, electrical feedthrus having multiple layers of molybdenum conductors separated by aluminum which is anodized and selectively etched for providing supports for the multilayer. The exposed molybdenum is cleaned and oxidized and sealed with glass to provide a hermetic seal. Contact portions of the molybdenum are cleaned and plated whereby the contacts will accept a contact seal.

Hermetically sealed multilayer electrical feedthru

A high density electrical interconnect having a plurality of metallic conductors supported from metallic pillars which are electrically isolated from the ground plane by openings. The interconnect can be fabricated using a temporary support dielectric, which may be removed after completion to provide an air dielectric or be replaced with a more suitable permanent dielectric. The removal of the temporary support allows the conductors to be coated with protective layers or with a layer of a higher conductivity.

Method of fabricating a high density electrical interconnect

Applying a photoresist layer containing a solvent to the top of an electronic wafer by spin coating. Before the layer dries the wafer is heated in an oven while controlling the solvent loss from the coating by maintaining the pressure of the solvent vapor and providing a slow solvent loss for planarizing the top surface of the polymer. The device is removed from the first oven and the bake cycle is completed in a standard convection bake oven.

Method of providing a planarized polymer coating on a substrate wafer

Method of making a hermetically sealed multilayer electrical feedthru

A method of fabricating an anodic aluminum support system having an air bridge for metallic conductors. The method includes providing two or more metal layers separated by a coating of aluminum creating a multiple layer electrical interconnect system. The method includes the step of anodizing the aluminum and applying a photoresist mask to spaced portions of the top of the system. Thereafter, an etching solution is applied to the top of the system for removing the anodized aluminum, except for the portions covered by the mask, thereby providing a multilayer conductor system supported by pillars of anodic aluminum surrounded by low dielectric air.

Electrical interconnect support system with low dielectric constant

A planarization method of fabricating a layer of metal conductors embedded in a dielectric level. A coating of aluminum is anodized from the top but leaving a thickness of unanodized aluminum on the bottom. The top is masked and etched to provide a predetermined bare area which is etched out down to the unanodized aluminum. A metal is plated to the unanodized aluminum equal to the thickness of the unexposed anodic aluminum. The mask is removed and the unanodized aluminum is anodized. Therefore, the layer of metal and the dielectric anodic aluminum are planarized. Another anodizable metal may be used as an undercoat layer for completing the anodizing of the aluminum.

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Austin, TX, United States of America

Curtis Nathan Potter