Eliyan Corporation

Curtis McAllister

Syrus Ziai

Ramin Farjadrad

Kevin Donnelly

Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a memory chiplet is disclosed. The memory chiplet includes memory control circuitry for controlling at least one memory die of a first memory type. A die-to-die (D2D) interface circuit couples to a host IC chiplet. The D2D interface circuit includes input/output (I/O) circuitry for coupling to multiple signaling lanes for transferring information packets with the host IC chiplet.

Universal memory interface utilizing die-to-die (D2D) interfaces between chiplets

Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a memory chiplet is disclosed. The memory chiplet includes at least one memory die of a first memory type. Memory control circuitry is coupled to the at least one memory die. An interface circuit is for coupling to a host IC chiplet. The interface circuit includes data input/output (I/O) circuitry for coupling to multiple data lanes. Link directional control circuitry selects, for a first memory transaction, a first subset of the multiple data lanes to transfer data between the memory chiplet and the host IC chiplet.

Universal memory interface with dynamic bidirectional data transfers

Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a multi-chip module (MCM) is disclosed. The MCM includes a package substrate and an integrated circuit (IC) processor chip disposed on the package substrate. The IC processor chip includes a data interface configured to support N channels. A scalable high bandwidth memory (HBM) is coupled to the IC processor chip. The scalable HBM includes a first HBM device disposed on the package substrate with a first primary data interface that supports a first set of N/2 data channels and a first data transfer rate. A second HBM device is disposed on the package substrate and supports a second set of N/2 data channels and a second data transfer rate. The first HBM device and the second HBM device are configured to collectively support the full N channels and an aggregate data rate that is a sum of the first data rate and the second data rate.

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Los Altos, CA, United States of America

Curtis McAllister