Motorola Corporation

Curtis Lee Burt

Hang M Liaw

John W Steele

Stella Q Hong

Clifford P Stein

A method for forming a relaxed semiconductor layer (12) includes forming a strained semiconductor layer on a substrate (11). The strained semiconductor layer has a different lattice constant than the substrate (11). Without exposing the strained semiconductor layer to an oxidizing ambient, the strained semiconductor layer is relaxed using thermal stress.

Method for forming a semiconductor device having a heteroepitaxial layer

An epitaxial reactor (10) includes a bell jar (11) wherein epitaxial depositions are performed. During an epitaxial deposition cycle, the temperature of the bell jar (11) is monitored by an infrared detector (22). After the temperature reaches a predetermined value, initiation of further epitaxial deposition cycles is inhibited. The control method extends the useful lifetime of heating lamps (12) and bell jar seals thereby reducing the cost of semiconductor wafers (16).

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Glendale, AZ, United States of America

Curtis Lee Burt