American Air Liquide, Inc.

L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Air Liquide Electronics U.S. LP

Curtis Anderson

Christian Dussarrat

Nathan Stafford

Rahul Gupta

Vincent M Omarjee

Peng Shen

Venkateswara R Pallem

James J F McAndrew

Vijay Surla

François Doniat

James J F Mcandrew

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Fluorocarbon molecules for high aspect ratio oxide etch

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1&#x2264;x&#x3c;7, 1&#x2264;y&#x2264;13, and 1&#x2264;z&#x2264;13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Chemistries for TSV/MEMS/power device etching

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Method of etching semiconductor structures with etch gas

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1 &#x2266;x&#x3c;7, 1&#x2266;y&#x2266;13, and 1&#x2266;z&#x2266;13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Disclosed herein are mono-functional silylating compounds that may exhibit enhanced silylating capabilities. Also disclosed are method of synthesizing and using these compounds. Finally methods to determine effective silylation are also disclosed.

Cyclic amino compounds for low-k silylation

Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films.

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Victori, MN, United States of America

Curtis Anderson