Rf Micro Devices, Inc.

Curtis A Barratt

Michael T Fresina

Jon D Jorgenson

Brian G Moser

Walter Anthony Wohlmuth

Larry W Kapitan

Khoi Tam Vu

Ramond Jeffrey Vass

Dain C Miller

Arthur E Geissberger

The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. The epitaxial structures are separated with at least one separation layer. Additional embodiments of the present invention may use different epitaxial layers, epitaxial sub-layers, metallization layers, isolation layers, layer materials, doping materials, isolation materials, implant materials, or any combination thereof.

Integrated bipolar transistor and field effect transistor

Adaptive manufacturing of semiconductor circuits

A voltage variable resistor formed on heterojunction bipolar transistor epitaxial material includes a current channel made on emitter material. Emitter mesas separated by a recess provide the contacts for the voltage variable resistor. Each mesa is topped with emitter metal forming the resistor contacts. The emitter mesas are layered on top of the current channel that is layered atop of a base layer. The voltage variable resistor's control contact is provided by a base contact located on the base layer and separated from the current channel.

Voltage variable resistor from HBT epitaxial layers

Growing community of inventors

Greensboro, NC, United States of America

Curtis A Barratt