Crossbar, Inc.

Integrated Device Technology, Inc.

Micrel, Incorporated

Cung Vu

Hagop A Nazarian

Sang Thanh Nguyen

Tianhong Yan

Dzung Huu Nguyen

Menping Chang

John D Nguyen

June-Ying Chen

A field programmable gate array (FPGA) utilizing resistive switching memory technology is described. The FPGA can comprise a switching block interconnect having a set of signal input lines and a set of signal output lines. Respective intersections of the signal input lines and signal output lines can have two resistive switching memory cells, a current differential latch, and a switching transistor (also referred to as a pass gate transistor) arranged in a circuit. Resistance states of the resistive switching memory cells can be programmed to control an output voltage state of the current differential latch. The output voltage state is latched into the current differential latch which can drive a gate of the switching transistor to activate or deactivate the switching transistor, which in turn activates or deactivates an intersection of the FPGA.

Configuration bit using RRAM

A semiconductor device includes two-terminal memory devices characterized by a range of program voltages and a first capacitance, wherein the two-terminal memory devices are coupled in parallel between ground and a first common node, a first capacitor having a second capacitance, coupled between ground and a second common node, a voltage source configured to provide an input voltage lower than the range of program voltages, a first operational amplifier including an inverting input, a non-inverting input, and an output, wherein the non-inverting input is coupled to the first voltage source, wherein the inverting input is coupled to a third common node, and wherein the output is coupled to a fourth common node, a first resistance device coupled between the third common node and the fourth common node, and wherein the first common node is coupled to the second common node and the third common node.

Capacitance measurement and apparatus for resistive switching memory devices

A detection circuit that can detect a two-terminal memory cell changing state. For example, in response to electrical stimuli, a memory cell will change state (e.g., to a highest resistance state), but existing techniques do not detect this state change until after the stimuli is completed and a subsequent sensing operation (e.g., read pulse) is performed. The detection circuit can detect the state change during application of the electrical stimuli that causes the state change.

State change detection for two-terminal memory during application of a state-changing stimulus

A complementary output driver includes a driver input that receives an input signal which alternates between a first state and a second state. A first inverter has a first input and a first output. The first input is coupled to the driver input and the first output generates a complementary output signal that is the complement of a present state of the input signal. A second inverter has a second input and a second output. The second input is coupled to the first output of the first inverter and the second output generates an output signal that is the complement of the present state of the first output. A push-pull network has a push-pull input and a push-pull output. The push-pull input is coupled to the driver input and the push-pull output is coupled to the second output.

Complementary output inverter

A clock generator and method generates a plurality of clocks of different frequencies using a delay lock loop and a sequencer. The delay lock loop receives an input clock signal having an input clock frequency and generates a plurality of delayed clock signals each having a frequency same as the input clock frequency and a different phase delay in relation to the input clock signal. The sequencer receives the delayed clock signals and selects one the delayed clock signals at any moment according to a predetermined sequence to generate an output clock signal having an output clock frequency corresponding to the predetermined sequence. The frequency of the output clock signal is controlled by the sequence in which the delayed clock signals are by the sequencer.

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Cung Vu