Intel Corporation

Cung Tran

John Heck

Mark Isenberger

Harel Frish

Wei Qian

Kelly Christopher Magruder

Reece DeFrees

Mengyuan Huang

Seth M Slavin

Sungbong Park

Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.

Embedded three-dimensional electrode capacitor

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Niskayuna, NY, United States of America

Cung Tran