Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC China Company Limited

CunCun Chen

Yaqi Ma

XinYong Wang

Wei Yu Li

Lei Pan

Yongliang Jin

JiaLiang Zhong

Kai Zhou

MingJian Wang

A circuit (to shape a follower voltage for a follower circuit) includes a tie-low circuit and an anti-noise circuit. The tie-low circuit is connected between a follower node and a first reference voltage. The tie-low circuit is responsive to a second reference voltage. The follower node is connectable to the follower circuit. The anti-noise circuit is connected between the follower node and the second reference voltage. The anti-noise circuit is configured to protect the follower voltage at the follower node from otherwise being distorted by a noise voltage being coupled capacitively to the follower node.

Semiconductor circuit including a tie-low circuit and method of fabricating same

An integrated circuit (IC) device includes a first substrate, a through substrate via (TSV) in the first substrate, and a first antenna effect protection circuit over the first substrate and electrically coupled to the TSV. The first antenna effect protection circuit includes at least one first transistor of a first type, and at least one second transistor of a second type different from the first type. A gate terminal, a first terminal and a second terminal of each of the at least one first transistor and the at least one second transistor are electrically coupled together, and to the TSV.

Integrated circuit device with antenna effect protection circuit and method of manufacturing

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Hsinchu, Taiwan

CunCun Chen