The 13Th Research Institute of China Electronics Technology Group Corporation

Cui Wei

Zhihong Feng

Jia Li

Zezhao He

Jingjing Wang

Qingbin Liu

A method for manufacturing a graphene transistor based on self-aligning technology, the method comprising: on a substrate (), forming sequentially graphene material (), a metal film (), and photoresist patterns () formed by lithography, removing the metal film and the graphene material uncovered by the photoresist, forming an active area, and metal electrodes () of a source, a gate, and a drain of the transistor, wherein the source electrodeand drain electrodeare connected with a metal of the active region, and forming gate photoresist patterns () between the source and the drain by lithography, etching off the exposed metal, forming sequentially a seed layer (), a gate dielectric layer (), and gate metal () on the exposed graphene surface, and finally forming a graphene transistor.

Growing community of inventors

Shijiazhuang, China

Cui Wei