Endicott Interconnect Technologies, Inc.

Ii-vi Incorporated

Ev Products, Inc.

Csaba Szeles

Utpal Kumar Chakrabarti

Kelvin Lynn

Vincent D Mattera, Jr

Michael Prokesch

Stephen A Soldner

Derek S Bale

Gary L Smith

Scott E Cameron

Kelvin G Lynn

A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.

Semiconductor radiation detector with thin film platinum alloyed electrode

In a method of annealing a CdZnTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Annealing of semi-insulating CdZnTe crystals

A CdZnTe photon counting detector includes a core material of CdZnTe, where (0&#x2266;x&#x3c;1), an anode terminal on one side of the core material and a cathode terminal on a side of the core material opposite the anode terminal. At least one of the following is selected in the design of the detector as a function of the maximum sustainable photon flux the core material is able to absorb in operation while avoiding polarization of the core material: electron lifetime-mobility product of the core material; de-trapping time of the core material; a value of a DC bias voltage applied between the anode and the cathode; a temperature of the core material in operation; a mean photon flux density to be absorbed by the core material in operation; and a thickness of the core material between the anode and the cathode.

CdZnTe device using constrained design for high-flux x-ray spectroscopic imaging applications

A radiation detector crystal is made from CdxZn1-xTe, where 0&#x2266;x&#x2266;1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.

Radiation detector crystal and method of formation thereof

A radiation detector made from a compound, or alloy, comprising CdxZn1&#x2212;xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion. The radiation detector exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

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Allison Park, PA, United States of America

Csaba Szeles