Globalfoundries U.S. Inc.

Crystal R Kenney

Judson Robert Holt

Peter Baars

Viorel C Ontalus

Ketankumar Harishbhai Tailor

Michael Zier

Structures including a vertical heterojunction bipolar transistor and methods of forming a structure including a vertical heterojunction bipolar transistor. The structure comprises a semiconductor substrate including a trench, a first semiconductor layer including a portion adjacent to the trench, a dielectric layer between the first semiconductor layer and the semiconductor substrate, and a second semiconductor layer in the trench. The dielectric layer has an interface with the first semiconductor layer, and the second semiconductor layer includes a portion that is recessed relative to the interface. The structure further comprises a vertical heterojunction bipolar transistor including a collector in the portion of the second semiconductor layer.

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Waterford, NY, United States of America

Crystal R Kenney