The Penn State Research Foundation

Consejo Superior De Investigaciones Cientificas

Cristina Ramirez

Mauricio Terrones

Humberto R Gutierrez

Maria Isabel Osendi

Manuel Belmonte

Pilar Miranzo

Carmen Ocal

Benito Roman-Manso

Humberto R Guitierrez

We provide a method for the in situ development of graphene containing silicon carbide (SiC) matrix ceramic composites, and more particularly to the in situ graphene growth within the bulk ceramic through a single-step approach during SiC ceramics densification using an electric current activated/assisted sintering (ECAS) technique. This approach allows processing dense, robust, highly electrical conducting and well dispersed nanocomposites having a percolated graphene network, eliminating the handling of potentially hazardous nanostructures. Graphene/SiC components could be used in technological applications under strong demanding conditions where good electrical, thermal, mechanical and/or tribological properties are required, such as micro and nanoelectromechanical systems (MEMS and NEMS), sensors, actuators, heat exchangers, breaks, components for engines, armors, cutting tools, microturbines or microrotors.

Process for production of graphene/silicon carbide ceramic composites

Growing community of inventors

Madrid, Spain

Cristina Ramirez