Infineon Technologies Ag

Cristina Consani

Thomas Grille

Andreas Tortschanoff

Bernhard Jakoby

Christian Ranacher

Peter Irsigler

Banafsheh Abasahl

Reyhaneh Jannesari

Gerald Puehringer

Thomas Krotscheck Ostermann

Gerald Stocker

Clement Fleury

An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.

Optical resonator system, narrowband mid-infrared radiation source

A fluid sensor includes a substrate having a top main surface region, wherein the top main surface region of the substrate forms a common system plane of the fluid sensor, a thermal radiation emitter on the top main surface region of the substrate, an optical filter structure on the top main surface region of the substrate, a waveguide on the main top surface region of the substrate, and a thermal radiation detector on the top main surface region of the substrate, wherein the thermal radiation detector provides a detector output signal based on a radiation strength of the filtered thermal radiation received from the waveguide.

Fluid sensor including an optical filter and a waveguide, and method for manufacturing the fluid sensor

In accordance with an embodiment, a bandpass transmission filter having a center wavelength of transmission includes: a waveguide structure comprising a grating structure having changing grating pitch values configured to diffract radiation in the waveguide structure having a first wavelength lower than the center wavelength of transmission, and configured to reflect radiation in the waveguide structure having a second wavelength higher than the center wavelength of transmission; and a radiation absorbing structure configured to absorb radiation guided by the waveguide structure having a third wavelength higher than the second wavelength, wherein the radiation absorbing structure is an integrated part of the waveguide structure or comprises a layer arranged adjacent to the waveguide structure.

Bandpass transmission filter and narrowband radiation source

An emitter for emitting electromagnetic radiation includes a first region for thermally generating electromagnetic radiation, wherein the first region includes a first photonic crystal of the type having a first periodical structure with first holes having a first dimension and being at a first periodicity, so as to define a first dimension-to-periodicity ratio; and a second region for filtering the electromagnetic radiation generated in the first region, wherein the second region includes a second photonic crystal of the type having a second periodical structure with second holes having a second dimension and being at a second periodicity, so as to define a second dimension-to-periodicity ratio, wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio.

Device and method for emitting electromagnetic radiation

A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

MEMS-component

In accordance with an embodiment, a gas sensor includes a substrate having a cavity for providing an optical interaction path; a thermal emitter configured to emit broadband IR radiation; a wavelength selective structure configured to filter the broadband IR radiation emitted by the thermal emitter; and an IR detector configured to provide a detector output signal based on a strength of the filtered IR radiation having traversed the optical interaction path.

Growing community of inventors

Villach, Austria

Cristina Consani