Binoptics Corporation

Macom Technology Solutions Holdings, Inc.

Rockley Photonics Limited

Cristian Stagarescu

Alex A Behfar

Alfred T Schremer, Jr

Malcolm R Green

Alfred T Schremer

Norman Sze-keung Kwong

Vainateya

Richard Robert Grzybowski

Kiyofumi Muro

Wolfgang Parz

Roe Hemenway

Jichi Ma

Nathan Bickel

Daniel Meerovich

Chia-Te Chou

Albert Benzoni

William Vis

Michael Lee

Melissa Ziebell

Norman Sze-Keung Kwong

Norman S Kwong

A system and method for alignment. In some embodiments, the method includes measuring a first offset, the first offset being an offset along a first direction between a first alignment mark and a second alignment mark, the first alignment mark being an alignment mark on a first edge of a source die, the second alignment mark being an alignment mark on a target wafer, and the first direction being substantially parallel to the first edge of the source die.

System and method for measuring alignment

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

Techniques for laser alignment in photonic integrated circuits

Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

High SMSR unidirectional etched lasers and low back-reflection photonic device

A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

Edge-emitting etched-facet lasers

A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.

Lasers with beam-shape modification

A reflective surface is disclosed in conjunction with a semiconductor laser to shape a laser beam and modify a direction of the laser beam. The reflective surface may be formed on a structure disposed adjacent to a laser structure to allow high coupling of laser light to, for example, a silicon photonics chip or an optical fiber.

Lasers with beam shape and beam direction modification

A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

Unidirectionality of lasers is enhanced by forming one or more etched gaps () in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg () of a V-shaped laser (). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges of a rectangular semiconductor chip by using three 45&#xb0; angled TIR facets to connect four legs of a ridge or buried heterostructure (BH) waveguide that defines the laser cavity. In other embodiments, even more TIR facets and waveguide legs or sections are employed to make even longer laser cavities in the shape of rectangular or quadrilateral spirals. These structures are limited in the spacing of adjacent waveguide sections, which if too small, can cause undesirable coupling between the sections. However, use of notches etched between the adjacent sections have been shown to decrease this coupling effect.

Long semiconductor laser cavity in a compact chip

A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.

Growing community of inventors

Ithaca, NY, United States of America

Cristian Stagarescu