Centre National De La Recherche Scientifique

Institut Polytechnique De Grenoble

Le Commissariat a L'energie Atomique Et Aux Energies Altenatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Cristian Papusoi

Bernard Dieny

Dimitri Houssameddine

Ricardo Sousa

Ursula Ebels

Liliana Buda-Prejbeanu

A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.

Spin polarised magnetic device

Growing community of inventors

Grenoble, France

Cristian Papusoi